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Compositional Engineering of Cu-Doped SnO Film for Complementary Metal Oxide Semiconductor Technology
R Hong, P He, S Zhang, X Hong, Q Tian, C Liu… - Nano Letters, 2024 - ACS Publications
Metal oxide semiconductor (MOS)-based complementary thin-film transistor (TFT) circuits
have broad application prospects in large-scale flexible electronics. To simplify circuit …
have broad application prospects in large-scale flexible electronics. To simplify circuit …
Optimal transistor sizing for maximum yield in variation‐aware standard cell design
Process variability, in addition to wide temperature and supply voltage variation ranges,
severely degrades the fabrication outcome (yield) of digital cells as for the fulfillment of …
severely degrades the fabrication outcome (yield) of digital cells as for the fulfillment of …
Fast and efficient resnn and genetic optimization for pvt aware performance enhancement in digital circuits
This paper presents a fast and efficient optimization engine with multi-directional, multi-
objective algorithms based on a robust transistor sizing approach to improve digital circuit …
objective algorithms based on a robust transistor sizing approach to improve digital circuit …
Efficient and reliable fault analysis methodology for nanomagnetic circuits
The increasing issues in scaled Complementary Metal Oxide Semiconductor (CMOS) circuit
fabrication favor the flourishing of emerging technologies. Because of their limited sizes …
fabrication favor the flourishing of emerging technologies. Because of their limited sizes …
Yield-driven power-delay-optimal CMOS full-adder design complying with automotive product specifications of PVT variations and NBTI degradations
We present the detailed results of the application of mathematical optimization algorithms to
transistor sizing in a full-adder cell design, to obtain the maximum expected fabrication yield …
transistor sizing in a full-adder cell design, to obtain the maximum expected fabrication yield …
Energy-Performance Optimization via P/N Ratio Sizing With Full Diffusion Layout Structure and Standard Cell Height Tuning in Near-Threshold Voltage Operation
In recent decades, near-threshold voltage (NTV) design has become a well-known
technique for improving the energy efficiency of digital integrated circuits. However, scaling …
technique for improving the energy efficiency of digital integrated circuits. However, scaling …
The Power Dissipation of Complementary Metal Oxide Semiconductor (CMOS) Inverter and Propagation Delay for Various Technologies
The primary goal of this research paper is to examine the impact of different design
parameters on the power-delay product (PDP) in low-power very-large-scale integration …
parameters on the power-delay product (PDP) in low-power very-large-scale integration …
Optimising nanometric CMOS logic cells for low-power, low-energy, and noise margin
A Beg - International Journal of Electronics, 2017 - Taylor & Francis
In this paper, we present a multi-objective optimisation technique for transistor sizing in the
variation-prone nanometric complementary metal-oxide semiconductor (CMOS) logic cells …
variation-prone nanometric complementary metal-oxide semiconductor (CMOS) logic cells …
Modeling the probabilities of failures of 22 nm CMOS logic cells
A Beg - 2016 Third International Conference on Mathematics …, 2016 - ieeexplore.ieee.org
In this paper, we present mathematical models of the failure probabilities of individual MOS
transistors. We use the models to characterize the failures of a few common CMOS logic …
transistors. We use the models to characterize the failures of a few common CMOS logic …
Optimization of 22 nm Logic Gates for Power-and-Noise-Margin and Energy-and-Noise-Margin
In this paper, we propose a technique for concurrent optimization of CMOS logic gates for
power-and-noisemargin and energy-and-noise-margin. The role of progressive sizing for …
power-and-noisemargin and energy-and-noise-margin. The role of progressive sizing for …