Compositional Engineering of Cu-Doped SnO Film for Complementary Metal Oxide Semiconductor Technology

R Hong, P He, S Zhang, X Hong, Q Tian, C Liu… - Nano Letters, 2024 - ACS Publications
Metal oxide semiconductor (MOS)-based complementary thin-film transistor (TFT) circuits
have broad application prospects in large-scale flexible electronics. To simplify circuit …

Optimal transistor sizing for maximum yield in variation‐aware standard cell design

Z Abbas, M Olivieri - International Journal of Circuit Theory and …, 2016 - Wiley Online Library
Process variability, in addition to wide temperature and supply voltage variation ranges,
severely degrades the fabrication outcome (yield) of digital cells as for the fulfillment of …

Fast and efficient resnn and genetic optimization for pvt aware performance enhancement in digital circuits

K Agarwal, A Jain, D Amuru… - … Symposium on VLSI …, 2022 - ieeexplore.ieee.org
This paper presents a fast and efficient optimization engine with multi-directional, multi-
objective algorithms based on a robust transistor sizing approach to improve digital circuit …

Efficient and reliable fault analysis methodology for nanomagnetic circuits

G Turvani, F Riente, F Cairo, M Vacca… - … Journal of Circuit …, 2017 - Wiley Online Library
The increasing issues in scaled Complementary Metal Oxide Semiconductor (CMOS) circuit
fabrication favor the flourishing of emerging technologies. Because of their limited sizes …

Yield-driven power-delay-optimal CMOS full-adder design complying with automotive product specifications of PVT variations and NBTI degradations

Z Abbas, M Olivieri, A Ripp - Journal of Computational Electronics, 2016 - Springer
We present the detailed results of the application of mathematical optimization algorithms to
transistor sizing in a full-adder cell design, to obtain the maximum expected fabrication yield …

Energy-Performance Optimization via P/N Ratio Sizing With Full Diffusion Layout Structure and Standard Cell Height Tuning in Near-Threshold Voltage Operation

YW Lim, NA Kamsani, RM Sidek, SJ Hashim… - IEEE …, 2022 - ieeexplore.ieee.org
In recent decades, near-threshold voltage (NTV) design has become a well-known
technique for improving the energy efficiency of digital integrated circuits. However, scaling …

The Power Dissipation of Complementary Metal Oxide Semiconductor (CMOS) Inverter and Propagation Delay for Various Technologies

A Verma, V Singh, AK Upadhyay… - … in Engineering and …, 2023 - ieeexplore.ieee.org
The primary goal of this research paper is to examine the impact of different design
parameters on the power-delay product (PDP) in low-power very-large-scale integration …

Optimising nanometric CMOS logic cells for low-power, low-energy, and noise margin

A Beg - International Journal of Electronics, 2017 - Taylor & Francis
In this paper, we present a multi-objective optimisation technique for transistor sizing in the
variation-prone nanometric complementary metal-oxide semiconductor (CMOS) logic cells …

Modeling the probabilities of failures of 22 nm CMOS logic cells

A Beg - 2016 Third International Conference on Mathematics …, 2016 - ieeexplore.ieee.org
In this paper, we present mathematical models of the failure probabilities of individual MOS
transistors. We use the models to characterize the failures of a few common CMOS logic …

Optimization of 22 nm Logic Gates for Power-and-Noise-Margin and Energy-and-Noise-Margin

A Beg, R Ramzan, A Elchouemi - Proceedings on the …, 2016 - search.proquest.com
In this paper, we propose a technique for concurrent optimization of CMOS logic gates for
power-and-noisemargin and energy-and-noise-margin. The role of progressive sizing for …