Two-dimensional (2D) semiconductors have been considered as promising candidates to
fabricate ultimately scaled field-effect transistors (FETs), due to the atomically thin thickness …

Using DFT calculations, we investigate the effects of the type, location, and density of point
defects in monolayer MoS2 on electronic structures and Schottky barrier heights (SBH) of …

Lead ions in water are harmful to human health and ecosystems because of their high
toxicity and nondegradability. It is important to explore effective fluorescence probes for …

Carbon nanotube field effect transistors (CNTFETs) have gained remarkable attention in
modern fields, as one of the promising candidates for replacing conventional MOSFETs …

Metallization for contacts in organic electronic nanodevices is of great importance for their
performance. A lot of effects can appear at the contact/organic interface and modify the …

The newly prepared monolayer (ML) SiAs is expected to be a candidate channel material for
next-generation nano-electronic devices in virtue of its proper bandgap, high carrier mobility …

Low‐dimensional metal‐semiconductor vertical heterostructures (VH) are promising
candidates in the search of electronic devices at the extreme limits of miniaturization. Within …

Two-dimensional (2D) materials have received significant attention for their potential use in
next-generation electronics, particularly in nonvolatile memory and neuromorphic …

This research work presents our recent advancements in the study of graphene and other
two-dimensional (2D) materials. This review covers studies on graphene oxide (GO) thin …

Abstract Two-dimensional (2D) semiconductors represent the most promising post-silicon
channel materials for ultimate electronics. However, the unique atomic thickness renders …