An analytical model of dual material single gate do**-less Tunnel FET (DM-GU-TFET) with
gate underlap regions has been proposed. The potential of gate underlap area with channel …

In this article, a physics-based 2-D analytical model for electrical characteristics such as
electric field, surface potential, and drain current of source pocket hetero-dielectric double …

This article develops a 2-D model for surface potential, electric field and drain current for a
nanoscale silicon tunnel field effect transistors (TFET) with a δ p+ S i 1− x G ex layer at …

This draft investigates about the vertical tunnel FET (VTFET) with heterostructure at
channel/source interface of SiGe layer using Sentaurus Technology computer-aided design …

Highlights•Strained Ge 1-xy Si x Sn y/Ge 1-ab Si a Sn b based Drain Pocket (DP) Double
Gate TFET.•Ambipolarity is completely suppressed.•Presence of heterojunction at the source …

This paper developed the novel structure of a dual material double gate negative
capacitance tunnel field effect transistor (DMDG‐NC‐TFET) using HZO ferroelectric material …

Selecting designs that efficiently optimize multiple objectives simultaneously is an important
problem in several distinct industries. Typically, there is not a single ideal design; rather …

The present manuscript has proposed a capacitance-based model of dual material gate
charge plasma-based vertically t-shaped Tunnel Field Effect Transistor (DMG V-tTFET) with …

We build up the electrostatic model for Triple Material Quadruple Gate (TMQG) Tunnel Field
Effect Transistor of rectangular cross area, in view of semi 3D strategy in this paper. The …

A non-linear circuit model is proposed for silicon tunnel field-effect transistors (TFETs). The
model is mainly targeted to include the ambipolar current. The silicon TFET characteristics …