The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …

A new generation of high-efficiency power devices is being developed using wide bandgap
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …

Owing to its energy efficiency, silicon complementary metal–oxide–semiconductor (CMOS)
technology is the current driving force of the integrated circuit industry. Silicon's narrow …

Power and RF electronics applications have spurred massive investment into a range of
wide and ultrawide bandgap semiconductor devices which can switch large currents and …

This letter reports high-voltage GaN field-effect transistors fabricated on Si substrates. A
halide-based plasma treatment was performed to enable normally off operation. Atomic …

This paper presents a method with an accurate control of threshold voltages (V th) of
AlGaN/GaN high-electron mobility transistors (HEMTs) using a fluoride-based plasma …

New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent
to compensation and recombination in these materials are discussed. New results on …

In this letter, 600-V normally-OFF \rmSiN_x/AlGaN/GaN metal–insulator–semiconductor high-
electron-mobility transistor (MIS-HEMT) is reported. Normally-OFF operation and low OFF …

In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …