Instabilities in semiconductor heterostructure growth can be exploited for the self-organized
formation of nanostructures, allowing for carrier confinement in all three spatial dimensions …

GaAs (0 0 1) has been one of the most intensively studied surfaces for the past 30 years due
both to its importance as a substrate for epitaxial growth and to the challenge its phase …

During the last 20 years interest in high-resolution x-ray diffractometry and reflectivity has
grown as a result of the development of the semiconductor industry and the increasing …

The cap** process of self-assembled InAs quantum dots (QDs) grown on GaAs (100)
substrates by molecular-beam epitaxy is studied by cross-sectional scanning tunneling …

In order to fulfil the requirements of the information society there is a growing demand for
nanoelectronic devices with new or largely improved performances; these devices are …

Epitaxially grown self-assembled semiconductor quantum dots (QDs) with atom-like optical
properties have emerged as the best choice for single-photon sources required for the …

This article deals with the measurement of strain in semiconductor heterostructures from
convergent beam electron diffraction patterns. In particular, three different algorithms in the …

We propose a simple and straightforward technique to measure the composition distribution
of InGaAs/GaAs quantum dots (QDs). This method is based on the quantitative analysis of …

In this article we review the extensive experimental work on the compositional map** of
semiconductor quantum dots and rings. After a brief introduction of the various experimental …

The atomic structure and energy spectrum of InAs quantum dots (QDs) in an AlAs matrix
have been experimentally studied by transmission electron microscopy (TEM) and steady …