This article reports on the first demonstration of distributed amplifier monolithic microwave
integrated circuits (MMICs) with a bandwidth (BW) of more than 300 GHz. The three …

Broadband amplification of signals is desirable in many applications such as high-speed
data communications, high-resolution imaging systems, optoelectronics, and …

This article presents a cascaded distributed power amplifier (DPA) topology with greater
than 4.5-THz gain-bandwidth (GBW) product. The DPA uses stacking with multi-drive inter …

This article presents a 22–47 GHz wideband low-noise amplifier (LNA) with coupled L-type
interstage matching inductors. The coupled inductors extend the bandwidth of LNA by …

Distributed amplifiers (DAs) are always considered the best choice for wideband
amplification as they offer appropriate gain, matching and noise figure over the large …

A distributed amplifier in indium phosphide (InP) double-heterojunction bipolar transistor
(DHBT) technology was designed and fabricated. A new peaking method using a …

This article presents a novel Darlington cell that improves the gain–bandwidth product and
output power of distributed amplifiers (DAs). By employing two diode-connected transistors …

This paper reports an ultra-wideband low-noise amplifier in a transferred-substrate InP
DHBT technology. The wideband characteristics are obtained by using a distributed …

This article is an extension of the previous report on an ultrawideband distributed amplifier
(DA) in the InP double heterojunction bipolar transistor (DHBT) technology. With the choice …

An ultra broadband MMIC amplifier is designed using InP double-heterojunction bipolar
transistors and its on-chip measurements are reported. The multi-cell distributed amplifier …