In this manuscript, recent progress in the area of resistive random access memory (RRAM)
technology which is considered one of the most standout emerging memory technologies …

The utilization of bipolar-type memristive devices for the realization of synaptic connectivity
in neural networks strongly depends on the ability of the devices for analog conductance …

A major obstacle for the implementation of redox-based memristive memory or logic
technology is the large cycle-to-cycle and device-to-device variability. Here, we use …

As emerging technologies like artificial intelligence (AI) and big data continue to evolve, the
demand for high-performance computing (HPC) has been increasing, driving the …

The effects of external digitally synthesized Gaussian noise on the resistive state relaxation
time of a ZrO 2 (Y)-based memristive device when switching from a low resistance state to a …

Identifying limiting factors is crucial for a better understanding of the dynamics of the resistive
switching phenomenon in transition-metal oxides. This improved understanding is important …

A comprehensive investigation of long-term environmental stability and performance of
flexible hybrid resistive random access memory (RRAM) devices with PVK: MoS2/TiO2 …

In this paper, firstly, some recently explored promising materials and processes for resistive
random access memory (ReRAM) devices with bipolar switching mechanism along with …

By imitating the synaptic connectivity and plasticity of the brain, emerging electronic
nanodevices offer new opportunities as the building blocks of neuromorphic systems. One …

We have experimentally studied the influence of pulsed laser deposition parameters on the
morphological and electrophysical parameters of vanadium oxide films. It is shown that an …