Controlling short-channel effects in deep-submicron SOI MOSFETs for improved reliability: a review
This paper examines the performance degradation of a MOS device fabricated on silicon-on-
insulator (SOI) due to the undesirable short-channel effects (SCE) as the channel length is …
insulator (SOI) due to the undesirable short-channel effects (SCE) as the channel length is …
A review of hot-carrier degradation mechanisms in MOSFETs
A Acovic, G La Rosa, YC Sun - Microelectronics Reliability, 1996 - Elsevier
We review the hot-carrier effects and reliability problem in MOSFET. The mechanisms that
produce the substrate and gate current are discussed, and the various mechanisms for hot …
produce the substrate and gate current are discussed, and the various mechanisms for hot …
Analog circuits in ultra-deep-submicron CMOS
Modern and future ultra-deep-submicron (UDSM) technologies introduce several new
problems in analog design. Nonlinear output conductance in combination with reduced …
problems in analog design. Nonlinear output conductance in combination with reduced …
Analysis of the charge pum** technique and its application for the evaluation of MOSFET degradation
It is shown that the charge pum** technique is able not only to determine the degradation
mechanisms in MOS transistors under all kinds of aging conditions (eg, irradiation, hot …
mechanisms in MOS transistors under all kinds of aging conditions (eg, irradiation, hot …
Hot-carrier acceleration factors for low power management in DC-AC stressed 40nm NMOS node at high temperature
A Bravaix, C Guérin, V Huard, D Roy… - 2009 IEEE …, 2009 - ieeexplore.ieee.org
Channel hot-carrier degradation presents a renewed interest in the last NMOS nodes where
the device reliability of bulk silicon (core) 40 nm and Input/Output (IO) device is difficult to …
the device reliability of bulk silicon (core) 40 nm and Input/Output (IO) device is difficult to …
On the generation and recovery of interface traps in MOSFETs subjected to NBTI, FN, and HCI stress
A common framework for interface-trap (N IT) generation involving broken equivSi-H and
equivSi-O bonds is developed for negative bias temperature instability (NBTI), Fowler …
equivSi-O bonds is developed for negative bias temperature instability (NBTI), Fowler …
Design of on-chip lightweight sensors for effective detection of recycled ICs
The counterfeiting and recycling of integrated circuits (ICs) have become major issues in
recent years, potentially impacting the security and reliability of electronic systems bound for …
recent years, potentially impacting the security and reliability of electronic systems bound for …
A review of hot carrier degradation in n-channel MOSFETs—Part I: Physical mechanism
Transistor parametric drift due to conductionmode hot carrier degradation (HCD) in n-
MOSFETs is reviewed, for longand short-channel length (LCH) devices having different …
MOSFETs is reviewed, for longand short-channel length (LCH) devices having different …
Integrated circuit authentication
Outsourcing the design and fabrication of integrated circuits (ICs) has raised major concerns
about their security and reliability. Realized by the intentional modification of design …
about their security and reliability. Realized by the intentional modification of design …
Path-delay fingerprinting for identification of recovered ICs
The counterfeiting of integrated circuits (ICs) has been on the rise over the past decade,
impacting the security and reliability of electronic systems. Reports show that recovered ICs …
impacting the security and reliability of electronic systems. Reports show that recovered ICs …