[HTML][HTML] Ferroelectric field effect transistors for electronics and optoelectronics

H Jiao, X Wang, S Wu, Y Chen, J Chu… - Applied Physics …, 2023 - pubs.aip.org
Ferroelectric materials have shown great value in the modern semiconductor industry and
are considered important function materials due to their high dielectric constant and tunable …

Porous anodic aluminum oxide: anodization and templated synthesis of functional nanostructures

W Lee, SJ Park - Chemical reviews, 2014 - ACS Publications
In ambient atmospheres, aluminum becomes rapidly coated with a compact 2–3 nm thick
oxide layer. This native oxide layer prevents the metal surface from further oxidation …

A ferroelectric memristor

A Chanthbouala, V Garcia, RO Cherifi… - Nature materials, 2012 - nature.com
Memristors are continuously tunable resistors that emulate biological synapses,.
Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of …

Understanding, predicting, and designing ferroelectric domain structures and switching guided by the phase-field method

JJ Wang, B Wang, LQ Chen - Annual Review of Materials …, 2019 - annualreviews.org
Understanding mesoscale ferroelectric domain structures and their switching behavior
under external fields is critical to applications of ferroelectrics. The phase-field method has …

Non-piezoelectric effects in piezoresponse force microscopy

D Seol, B Kim, Y Kim - Current Applied Physics, 2017 - Elsevier
Piezoresponse force microscopy (PFM) has been used extensively for exploring nanoscale
ferro/piezoelectric phenomena over the past two decades. The imaging mechanism of PFM …

Universal ferroelectric switching dynamics of vinylidene fluoride-trifluoroethylene copolymer films

WJ Hu, DM Juo, L You, J Wang, YC Chen, YH Chu… - Scientific reports, 2014 - nature.com
In this work, switching dynamics of poly (vinylidene fluoride-trifluoroethylene)[P (VDF-TrFE)]
copolymer films are investigated over unprecedentedly wide ranges of temperature and …

Polarization switching in thin doped HfO2 ferroelectric layers

M Materano, PD Lomenzo, H Mulaosmanovic… - Applied Physics …, 2020 - pubs.aip.org
The deployment of ferroelectrics in device concepts such as Ferroelectric Random Access
Memory and Ferroelectric Field Effect Transistors requires a good understanding of the …

Room-Temperature Ferroelectric Resistive Switching in Ultrathin Pb(Zr0.2Ti0.8)O3 Films

D Pantel, S Goetze, D Hesse, M Alexe - ACS nano, 2011 - ACS Publications
Spontaneous polarization of ferroelectric materials has been for a long time proposed as
binary information support, but it suffers so far from destructive readout. A nondestructive …

Accumulative polarization reversal in nanoscale ferroelectric transistors

H Mulaosmanovic, T Mikolajick… - ACS applied materials & …, 2018 - ACS Publications
The electric-field-driven and reversible polarization switching in ferroelectric materials
provides a promising approach for nonvolatile information storage. With the advent of …

Recent progress in the nanoscale evaluation of piezoelectric and ferroelectric properties via scanning probe microscopy

O Kwon, D Seol, H Qiao, Y Kim - Advanced Science, 2020 - Wiley Online Library
Piezoelectric and ferroelectric materials have garnered significant interest owing to their
excellent physical properties and multiple potential applications. Accordingly, the need for …