Modeling of NBTI using BAT framework: DC-AC stress-recovery kinetics, material, and process dependence
Threshold voltage shift (ΔVT) due to Negative Bias Temperature Instability (NBTI) in p-
MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV T time kinetics …
MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV T time kinetics …
Modeling of DC-AC NBTI stress-recovery time kinetics in P-channel planar bulk and FDSOI MOSFETs and FinFETs
The physics-based BTI Analysis Tool (BAT) is used to model the time kinetics of threshold
voltage shift (ΔV T) during and after NBTI in p-channel planar bulk and FDSOI MOSFETs …
voltage shift (ΔV T) during and after NBTI in p-channel planar bulk and FDSOI MOSFETs …
Understanding frequency dependence of trap generation under AC negative bias temperature instability stress in Si p-FinFETs
In this letter, we present an experimental study on the frequency (f) dependence of trap
generation under AC negative bias temperature instability (NBTI) stress in Si p-channel fin …
generation under AC negative bias temperature instability (NBTI) stress in Si p-channel fin …
Modeling of HCD Kinetics Under Full VG – VD Space, Different Experimental Conditions and Across Different Device Architectures
A SPICE compatible compact modeling framework is discussed for Hot Carrier Degradation
(HCD) stress spanning the entire drain (VD) and gate (VG) voltage space and wide range of …
(HCD) stress spanning the entire drain (VD) and gate (VG) voltage space and wide range of …
A cycle-by-cycle HCD and BTI compact model to calculate FinFET based RO ageing using SPICE
U Sharma, C Pasupuleti, N Gangwar… - 2020 4th IEEE …, 2020 - ieeexplore.ieee.org
A SPICE compatible compact model is proposed for the time kinetics of threshold voltage
shift (ΔV_T) due to Hot Carrier Degradation (HCD) and Bias Temperature Instability (BTI) …
shift (ΔV_T) due to Hot Carrier Degradation (HCD) and Bias Temperature Instability (BTI) …
Insights into the effect of TiN thickness scaling on DC and AC NBTI characteristics in replacement metal gate pMOSFETs
Fast characterization methods are utilized to investigate DC and AC negative bias
temperature instability (NBTI) characteristics in pMOSFETs with different TiN cap** layer …
temperature instability (NBTI) characteristics in pMOSFETs with different TiN cap** layer …
A comparative study of TiN thickness scaling impact on DC and AC NBTI kinetics in replacement metal gate pMOSFETs
We use fast characterization methods to study DC and AC negative bias temperature
instability (NBTI) kinetics in pMOSFETs with varying TiN cap** layer thickness (tTiN). The …
instability (NBTI) kinetics in pMOSFETs with varying TiN cap** layer thickness (tTiN). The …