Error characterization, mitigation, and recovery in flash-memory-based solid-state drives

Y Cai, S Ghose, EF Haratsch, Y Luo… - Proceedings of the …, 2017 - ieeexplore.ieee.org
NAND flash memory is ubiquitous in everyday life today because its capacity has
continuously increased and cost has continuously decreased over decades. This positive …

Rowpress: Amplifying read disturbance in modern dram chips

H Luo, A Olgun, AG Yağlıkçı, YC Tuğrul… - Proceedings of the 50th …, 2023 - dl.acm.org
Memory isolation is critical for system reliability, security, and safety. Unfortunately, read
disturbance can break memory isolation in modern DRAM chips. For example, RowHammer …

Blockhammer: Preventing rowhammer at low cost by blacklisting rapidly-accessed dram rows

AG Yağlikçi, M Patel, JS Kim, R Azizi… - … Symposium on High …, 2021 - ieeexplore.ieee.org
Aggressive memory density scaling causes modern DRAM devices to suffer from
RowHammer, a phenomenon where rapidly activating (ie, hammering) a DRAM row can …

DAMOV: A new methodology and benchmark suite for evaluating data movement bottlenecks

GF Oliveira, J Gómez-Luna, L Orosa, S Ghose… - IEEE …, 2021 - ieeexplore.ieee.org
Data movement between the CPU and main memory is a first-order obstacle against improv
ing performance, scalability, and energy efficiency in modern systems. Computer systems …

A deeper look into rowhammer's sensitivities: Experimental analysis of real dram chips and implications on future attacks and defenses

L Orosa, AG Yaglikci, H Luo, A Olgun, J Park… - MICRO-54: 54th Annual …, 2021 - dl.acm.org
RowHammer is a circuit-level DRAM vulnerability where repeatedly accessing (ie,
hammering) a DRAM row can cause bit flips in physically nearby rows. The RowHammer …

{MQSim}: A framework for enabling realistic studies of modern {Multi-Queue}{SSD} devices

A Tavakkol, J Gómez-Luna, M Sadrosadati… - … USENIX Conference on …, 2018 - usenix.org
Solid-state drives (SSDs) are used in a wide array of computer systems today, including in
datacenters and enterprise servers. As the I/O demands of these systems have increased …

Figaro: Improving system performance via fine-grained in-dram data relocation and caching

Y Wang, L Orosa, X Peng, Y Guo… - 2020 53rd Annual …, 2020 - ieeexplore.ieee.org
Main memory, composed of DRAM, is a performance bottleneck for many applications, due
to the high DRAM access latency. In-DRAM caches work to mitigate this latency by …

The DRAM latency PUF: Quickly evaluating physical unclonable functions by exploiting the latency-reliability tradeoff in modern commodity DRAM devices

JS Kim, M Patel, H Hassan… - 2018 IEEE International …, 2018 - ieeexplore.ieee.org
Physically Unclonable Functions (PUFs) are commonly used in cryptography to identify
devices based on the uniqueness of their physical microstructures. DRAM-based PUFs have …

Understanding reduced-voltage operation in modern DRAM devices: Experimental characterization, analysis, and mechanisms

KK Chang, AG Yağlıkçı, S Ghose, A Agrawal… - Proceedings of the …, 2017 - dl.acm.org
The energy consumption of DRAM is a critical concern in modern computing systems.
Improvements in manufacturing process technology have allowed DRAM vendors to lower …

D-RaNGe: Using commodity DRAM devices to generate true random numbers with low latency and high throughput

JS Kim, M Patel, H Hassan, L Orosa… - 2019 IEEE International …, 2019 - ieeexplore.ieee.org
We propose a new DRAM-based true random number generator (TRNG) that leverages
DRAM cells as an entropy source. The key idea is to intentionally violate the DRAM access …