Time-dependent dielectric breakdown (TDDB), in which the traps in oxide bulk form a
conducting path under application of stress voltage for long period of time, has emerged as …

We propose a Monte Carlo (MC) simulation framework for circuits taking into account the
time-dependent dielectric breakdown (TDDB) statistics along with time-0 variability and …

The generation of new traps during TDDB may significantly accelerate BTI, since these traps
are close to the dielectric-Si interface in scaled technology. This work confirms the …

A physics-based SPICE model that takes into account the statistical impacts of both
successive and progressive oxide breakdowns is presented to evaluate the time-dependent …

The ageing effects have taken the attention as it shows the unavoidable sign as the device
size is shrinking. Three most crucial ageing effects that are known to give threat to circuits …

Heterogeneous three-dimensional (3D) integrated technique is a promising method to
achieve breakthrough bandwidth between DRAM and CPU in a computer system. However …

The aging mechanism in devices is prone to uncertainties due to dynamic stress conditions.
In AMS circuits these can lead to momentary fluctuations in circuit voltage that may be …

The relationship between the location of gate oxide breakdown in n-MOSFETs and its
electrical characteristics has been studied by using TCAD software. The comparison of …

Esta tesis se centra en el estudio de las interferencias electromagnéticas (“Electromagnetic
Interferences” o EMI) conducidas generadas a nivel de circuito integrado (CI). En la …