[HTML][HTML] MA2Z4 family heterostructures: Promises and prospects
Recent experimental synthesis of ambient-stable MoSi 2 N 4 monolayer has garnered
enormous research interest. The intercalation morphology of MoSi 2 N 4—composed of a …
enormous research interest. The intercalation morphology of MoSi 2 N 4—composed of a …
Advancements and challenges in the integration of indium arsenide and van der Waals heterostructures
The strategic integration of low‐dimensional InAs‐based materials and emerging van der
Waals systems is advancing in various scientific fields, including electronics, optics, and …
Waals systems is advancing in various scientific fields, including electronics, optics, and …
Polarization tunable bidirectional photoresponse in Van der Waals () ferroelectric diodes
Ferroelectric diodes can generate a polarization-controlled bidirectional photoresponse to
simulate inhibition and promotion behaviors in the artificial neuromorphic system with fast …
simulate inhibition and promotion behaviors in the artificial neuromorphic system with fast …
Towards ultralow-power and high-speed electronics: Tunnel transistor based on single-chain Tellurium
W Zhang, B Wang, K Li, Y Sun, J Zhou, Z Sun - Materials Today Physics, 2024 - Elsevier
The application of tunnel field-effect transistors (TFETs) in the sub-5.1 nm range meets the
challenges of low on-state current (I on), elevated leakage current (I leak) and a limited bias …
challenges of low on-state current (I on), elevated leakage current (I leak) and a limited bias …
Sub-5 nm Ultrathin In2O3 Transistors for High-Performance and Low-Power Electronic Applications
Ultrathin oxide semiconductors are promising candidates for back-end-of-line (BEOL)
compatible transistors and monolithic three-dimensional integration. Experimentally …
compatible transistors and monolithic three-dimensional integration. Experimentally …
Enhanced Electrical Performance of InAs Nanowire Field-Effect Transistors Based on the Y2O3 Isolation Layer
YF Jiang, JM Tian, T Li, S Li, BJ Wang… - ACS Applied Materials …, 2024 - ACS Publications
Nanowire (NW) field-effect transistors (FETs) have great potential in next-generation
integrated circuits. InAs NWs are suitable for N-type transistors because of their excellent …
integrated circuits. InAs NWs are suitable for N-type transistors because of their excellent …
Quantum transport simulation of α-GeTe ferroelectric semiconductor transistors
Q Li, Z Yang, X Yang, W Zhou, C Yang, X Sun… - Journal of Materials …, 2025 - pubs.rsc.org
Ferroelectric semiconductor transistor is a newly proposed device that uses ferroelectric
semiconductors as channel materials for integrated memory and computation. Currently, the …
semiconductors as channel materials for integrated memory and computation. Currently, the …
Ab-Initio Quantum Transport Simulation of Sub-1 nm Gate Length Monolayer and Bilayer WSe2 Transistors: Implications for Ultra-Scaled CMOS Technology
Ultrascaled sizes and symmetrical n-and p-type performance are the pursuit of next-
generation field effect transistors (FETs). Although sub-1 nm gate length MoS2 n-FETs have …
generation field effect transistors (FETs). Although sub-1 nm gate length MoS2 n-FETs have …
Sub-5 nm Gate-All-Around InP Nanowire Transistors toward High-Performance Devices
The gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device
architecture due to its superior gate controllability compared to that of the conventional …
architecture due to its superior gate controllability compared to that of the conventional …
Controllable spin rectification behavior of vertical and lateral VSe 2/WSe 2 heterojunction Schottky diodes
X Liu, H Chen, Y Li, Y Mao - Physical Chemistry Chemical Physics, 2025 - pubs.rsc.org
Heterojunctions (HJs) based on two-dimensional (2D) transition metal dichalcogenides are
considered promising candidates for next-generation electronic and optoelectronic devices …
considered promising candidates for next-generation electronic and optoelectronic devices …