Binary metal oxide-based resistive switching memory devices: A status review

AR Patil, TD Dongale, RK Kamat, KY Rajpure - Materials Today …, 2023 - Elsevier
Semiconductor memories are essential ingredients of modern electronic devices. Resistive
Random-Access Memories (RRAMs) have emerged as better alternatives for conventional …

ZnO-based hybrid nanocomposite for high-performance resistive switching devices: Way to smart electronic synapses

A Kumar, K Preeti, SP Singh, S Lee, A Kaushik… - Materials Today, 2023 - Elsevier
Neuromorphic computing systems inspired by the human brain emulate biological synapses
electronically for information handling and processing. Recently, memristive switching …

Ti3C2-Based MXene Oxide Nanosheets for Resistive Memory and Synaptic Learning Applications

AC Khot, TD Dongale, JH Park… - … Applied Materials & …, 2021 - ACS Publications
MXene, a new state-of-the-art two-dimensional (2D) nanomaterial, has attracted
considerable interest from both industry and academia because of its excellent electrical …

Promising materials and synthesis methods for resistive switching memory devices: a status review

GU Kamble, AP Patil, RK Kamat, JH Kim… - ACS Applied …, 2023 - ACS Publications
In recent years, the emergence of memory devices, especially resistive random-access
memories (RRAM), has been a front-runner in many technological applications. This is due …

Review of electrochemically synthesized resistive switching devices: memory storage, neuromorphic computing, and sensing applications

SS Kundale, GU Kamble, PP Patil, SL Patil, KA Rokade… - Nanomaterials, 2023 - mdpi.com
Resistive-switching-based memory devices meet most of the requirements for use in next-
generation information and communication technology applications, including standalone …

Emulation of bio-synaptic behaviours in copper-doped zinc oxide memristors: a nanoscale scanning probe microscopic study

R Mandal, A Mandal, A Mitra, T Som - Applied Surface Science, 2022 - Elsevier
Memristors emulating biological synapses to perform memory and learning functions are
crucial for realizing bio-inspired neuromorphic systems. However, to meet the increasing …

Recent progress in selector and self‐rectifying devices for resistive random‐access memory application

TD Dongale, GU Kamble, DY Kang… - physica status solidi …, 2021 - Wiley Online Library
The recent progress of selector and self‐rectifying devices for resistive random‐access
memory applications is reviewed. In particular, the performance of crossbar arrays based on …

Bipolar resistive switching in junctions of gallium oxide and p-type silicon

MN Almadhoun, M Speckbacher, BC Olsen… - Nano Letters, 2021 - ACS Publications
In this work, native GaO x is positioned between bulk gallium and degenerately doped p-
type silicon (p+-Si) to form Ga/GaO x/SiO x/p+-Si junctions. These junctions show memristive …

Capacitive coupled non-zero I–V and type-II memristive properties of the NiFe2O4–TiO2 nanocomposite

NA Ahir, AV Takaloo, KA Nirmal, SS Kundale… - Materials Science in …, 2021 - Elsevier
In the present work, we have demonstrated the capacitive coupled non-zero and type-II
hysteresis behavior of nickel ferrite (NFO)-titanium oxide (TiO 2) nanocomposite. For this …

Reliable Resistive Switching and Multifunctional Synaptic Behavior in ZnO/NiO Nanocomposite Based Memristors for Neuromorphic Computing

R Khan, F Raziq, I Ahmad, S Ghosh… - ACS Applied …, 2024 - ACS Publications
Neuromorphic devices with extremely low energy consumption are greatly demanded for
brain-like computing and artificial intelligence (AI). In this work, the ZnO–NiO nanocomposite …