An overview on analyses and suppression methods of trap** effects in AlGaN/GaN HEMTs
R Ye, X Cai, C Du, H Liu, Y Zhang, X Duan… - IEEE Access, 2021 - ieeexplore.ieee.org
Due to the excellent material characteristics, AlGaN/GaN HEMTs are widely used in high
power and high frequency applications. However, the existence of damages, defects and …
power and high frequency applications. However, the existence of damages, defects and …
An artificial neural network-based electrothermal model for GaN HEMTs with dynamic trap** effects consideration
AD Huang, Z Zhong, W Wu… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
A complete solution from parameter extraction to large-signal electrothermal model
generation for gallium nitride (GaN) HEMTs is presented in this paper with the consideration …
generation for gallium nitride (GaN) HEMTs is presented in this paper with the consideration …
ASM GaN: Industry standard model for GaN RF and power devices—Part-II: Modeling of charge trap**
SA Albahrani, D Mahajan, J Hodges… - … on Electron Devices, 2018 - ieeexplore.ieee.org
Because of charge trap** in GaN HEMTs, dc characteristics of these devices are not
representative of high-frequency operation. The advanced spice model GaN model …
representative of high-frequency operation. The advanced spice model GaN model …
Review of RF Device Behavior Model: Measurement Techniques, Applications, and Challenges
H Li, J Su, R Wang, Z Liu, M Xu - Micromachines, 2023 - mdpi.com
This review presents a concise overview of RF (radio frequency) power transistor behavior
models, which is crucial for optimizing RF performance in high-frequency applications like …
models, which is crucial for optimizing RF performance in high-frequency applications like …
On neural networks based electrothermal modeling of GaN devices
A Jarndal - IEEE Access, 2019 - ieeexplore.ieee.org
This paper presents an efficient artificial neural network (ANN) electrothermal modeling
approach applied to GaN devices. The proposed method is based on decomposing the …
approach applied to GaN devices. The proposed method is based on decomposing the …
An accurate neural network-based consistent gate charge model for GaN HEMTs by refining intrinsic capacitances
Neural network-based capacitance models are accurate, but some of them are not charge-
conservative. In this work, a novel consistent gate charge model for GaN high electron …
conservative. In this work, a novel consistent gate charge model for GaN high electron …
Empowering GaN HEMT models: The gateway for power amplifier design
The purpose of this invited paper is to give readers a comprehensive and critical overview
on how to extract equivalent‐circuit models for GaN HEMTs, which are the preferred devices …
on how to extract equivalent‐circuit models for GaN HEMTs, which are the preferred devices …
This paper presents a novel empirical model for gallium nitride on silicon carbide high-
electron mobility transistors. A global state-space formulation describes charge trap** …
electron mobility transistors. A global state-space formulation describes charge trap** …
Save Cite Cited by 30 C Florian, T Cappello, A Santarelli… - IEEE Transactions …, 2017 - ieeexplore.ieee.org
The asymmetry between capture and release time constants associated with charge-
trap** phenomena observed in the electrical characteristics of microwave gallium-nitride …
trap** phenomena observed in the electrical characteristics of microwave gallium-nitride …
Characterization and modeling of RF GaN switches accounting for trap-induced degradation under operating regimes
This paper describes the performance degradation of RF GaN-on-SiC HEMT switches due
to the charge trap**, which is triggered by high voltages under operating regimes. A …
to the charge trap**, which is triggered by high voltages under operating regimes. A …