III-nitride nanostructures have recently emerged as promising materials for new
intersubband (ISB) devices in a wide variety of applications. These ISB technologies rely on …

This paper reviews recent progress toward intersubband (ISB) devices based on III-nitride
quantum wells (QWs). First, we discuss the specific features of ISB active region design …

We demonstrate terahertz intersubband absorptions at frequencies of 2.1 THz (λ≈ 143 μ m)
and 4.2 THz (λ≈ 70 μ m) in nitride-based semiconductor quantum wells. The structures …

The intersubband absorption of cubic GaN/Al (Ga) N quantum wells is studied
experimentally and theoretically over a wide spectral range. By changing the quantum well …

This paper assesses intersubband (ISB) transitions in the 1–10 THz frequency range in
nonpolar m-plane GaN/AlGaN multi-quantum-wells deposited on free-standing semi …

Mid-infrared (4.20–4.84 μm) intersubband absorption in non-polar m-plane Al 0.5 Ga 0.5
N/GaN multiple-quantum wells is observed at room temperature. 10 period Al 0.5 Ga 0.5 …

We report the observation of transverse-magnetic-polarized infrared absorption assigned to
the s–pz intraband transition in Ge-doped GaN/AlN nanodisks (NDs) in self-assembled GaN …

This paper assesses nonpolar m-and a-plane GaN/Al (Ga) N multi-quantum-wells grown on
bulk GaN for intersubband optoelectronics in the short-and mid-wavelength infrared ranges …

We report on the effect of Si do** on the mid-infrared intersubband absorption in
GaN/AlGaN superlattices. For increasing do** levels, interband luminescence displays a …

In the last two decades, the third-generation wide bandgap semiconductor III-nitrides have
revolutionized a myriad of electronic and photonic devices and applications, including …