Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …

Abstract Graphene Quantum Dots (GQDs), zero-dimensional nanoparticles which are
derived from carbon-based sources owned the new pavement for the energy storage …

This paper presents the design and fabrication of a broadband microstrip attenuator,
operating at 1-20 GHz, based on few layer graphene flakes. The RF performance of the …

This letter presents a voltage-controlled tunable attenuator based on few layer graphene
flakes. The proposed structure exploits the variation of graphene resistance with an applied …

Absence of the Dirac cone due to a strong band hybridization is revealed to be a common
feature for epitaxial silicene on metal substrates according to our first-principles calculations …

Field-effect transistors (FETs) based on moderate or large diameter carbon nanotubes
(CNTs) usually suffer from ambipolar behavior, large off-state current and small current …

We present novel p+-bilayer graphene (BLG) and mercury cadmium telluride (MCT)-based
single-and dual-junction photodetectors, namely, p+-BLG/n--MCT and p+-BLG/n--MCT/n+ …

Graphene, a promising material with excellent properties, suffers from a major limitation in
electronics due to its zero bandgap. The gas molecules adsorption has proven to be an …

This letter presents a voltage-controlled tunable phase shifter based on few-layer graphene.
The phase shifter consists of a stub-loaded line, composed of a microstrip line with a stub …

We present a high-performance bilayer graphene (BLG) and mercury cadmium telluride
(Hg1− xCdx= 0.1867 Te) heterojunction based very long wavelength infrared (VLWIR) …