Nanoscale self-assembly: concepts, applications and challenges

EV Amadi, A Venkataraman, C Papadopoulos - Nanotechnology, 2022‏ - iopscience.iop.org
Self-assembly offers unique possibilities for fabricating nanostructures, with different
morphologies and properties, typically from vapour or liquid phase precursors. Molecular …

A Josephson phase battery

E Strambini, A Iorio, O Durante, R Citro… - Nature …, 2020‏ - nature.com
A classical battery converts chemical energy into a persistent voltage bias that can power
electronic circuits. Similarly, a phase battery is a quantum device that provides a persistent …

Spin cross-correlation experiments in an electron entangler

A Bordoloi, V Zannier, L Sorba, C Schönenberger… - Nature, 2022‏ - nature.com
Correlations are fundamental in describing many-body systems. However, in experiments,
correlations are notoriously difficult to assess on a microscopic scale, especially for electron …

Thermoelectric conversion at 30 K in InAs/InP nanowire quantum dots

D Prete, PA Erdman, V Demontis, V Zannier… - Nano …, 2019‏ - ACS Publications
We demonstrate high-temperature thermoelectric conversion in InAs/InP nanowire quantum
dots by taking advantage of their strong electronic confinement. The electrical conductance …

Gate-controlled suspended titanium nanobridge supercurrent transistor

M Rocci, G De Simoni, C Puglia, DD Esposti… - ACS …, 2020‏ - ACS Publications
Under standard conditions, the electrostatic field-effect is negligible in conventional metals
and was expected to be completely ineffective also in superconducting metals. This common …

Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy

EAA Pogna, M Asgari, V Zannier, L Sorba… - Light: Science & …, 2020‏ - nature.com
Semiconductor nanowire field-effect transistors represent a promising platform for the
development of room-temperature (RT) terahertz (THz) frequency light detectors due to the …

Ionic‐Liquid Gating of InAs Nanowire‐Based Field‐Effect Transistors

J Lieb, V Demontis, D Prete, D Ercolani… - Advanced Functional …, 2019‏ - Wiley Online Library
Here, the operation of a field‐effect transistor based on a single InAs nanowire gated by an
ionic liquid is reported. Liquid gating yields very efficient carrier modulation with a …

[HTML][HTML] Temperature behavior and logic circuit applications of InAs nanowire-based field-effect transistors

L Viscardi, E Faella, K Intonti, F Giubileo… - Materials Science in …, 2024‏ - Elsevier
InAs nanowire-based back-gated field-effect transistors realized starting from individual InAs
nanowires are investigated at different temperatures and as building blocks of inverter …

Vectorial control of the spin–orbit interaction in suspended InAs nanowires

A Iorio, M Rocci, L Bours, M Carrega, V Zannier… - Nano …, 2018‏ - ACS Publications
Semiconductor nanowires featuring strong spin–orbit interactions (SOI), represent a
promising platform for a broad range of novel technologies, such as spintronic applications …

Magnetically-driven colossal supercurrent enhancement in InAs nanowire Josephson junctions

J Tiira, E Strambini, M Amado, S Roddaro… - Nature …, 2017‏ - nature.com
The Josephson effect is a fundamental quantum phenomenon where a dissipationless
supercurrent is introduced in a weak link between two superconducting electrodes by …