Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …

Key properties of quantum materials stem from dynamic interaction chains that connect
stable electronic quasiparticles through short-lived coherences, which are difficult to control …

Computing in the analog regime using nonlinear ferroelectric resistive memory arrays can
potentially alleviate the energy constraints and complexity/footprint challenges imposed by …

We report on the thickness scaling behavior of ferroelectric Sc 0.3 Al 0.7 N (ScAlN) films
grown on Mo substrates by molecular beam epitaxy. Switchable ferroelectricity is confirmed …

Electrically switchable bistable conductance that occurs in ferroelectric materials has
attracted growing interest due to its promising applications in data storage and in‐memory …

Ferroelectrics have great potential in the field of nonvolatile memory due to programmable
polarization states by external electric field in nonvolatile manner. However, complementary …

We report the demonstration of ferroelectric switching in yttrium (Y)-doped nitride
semiconductors. In this study, single-crystalline, wurtzite Y 0.07 Al 0.93 N films were …

III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …

In this Letter, we demonstrated fully epitaxial ScAlN/AlGaN/GaN based ferroelectric high
electron mobility transistors (HEMTs). Clean and atomically sharp heterostructure interfaces …

We report on the ferroelectric properties of single-phase wurtzite ScGaN grown on GaN by
plasma-assisted molecular beam epitaxy. Distinct ferroelectric switching behavior was …