Transparent electronics is today one of the most advanced topics for a wide range of device
applications. The key components are wide bandgap semiconductors, where oxides of …

The field of flexible electronics has rapidly expanded over the last decades, pioneering
novel applications, such as wearable and textile integrated devices, seamless and …

The effects of bias stress on transistor performance are important when considering
nontraditional channel materials for thin film transistors. Applying a gate bias stress to …

The electron conduction mechanism in the above-threshold regime in amorphous oxide
semiconductor thin film transistors is shown to be controlled by percolation and trap-limited …

We perform first-principles density functional calculations to investigate the atomic and
electronic properties of various O-vacancy (VO) defects in amorphous indium gallium zinc …

We have investigated the high-performance oxide thin-film transistor (TFT) with an
amorphous indium gallium zinc oxide (a-IGZO) channel and ZrO_2 gate dielectrics. The a …

We reported on a two-dimensional simulation of electrical properties of the radio frequency
(rf) sputter amorphous In–Ga–Zn–O (⁠ a-IGZO) thin-film transistors (TFTs). The a-IGZO TFT …

The variety of semiconductor materials has been extended in various directions, for
example, to very wide bandgap materials such as oxide semiconductors as well as to …

In this work we present a study aiming to determine the role of Ga2O3–In2O3–ZnO (GIZO)
channel layer composition on the electrical performance and stability exhibited by thin-film …

Volume Two focuses on devices and nanostructures created from ZnO and similar materials.
The book covers various nanostructures, synthesis/creation strategies, device behavior, and …