Partial-MDS codes and their application to RAID type of architectures
M Blaum, JL Hafner, S Hetzler - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
A family of codes with a natural 2-D structure is presented, inspired by an application of
redundant arrays of independent disks (RAID) type of architectures whose units are solid …
redundant arrays of independent disks (RAID) type of architectures whose units are solid …
Codes for write-once memories
A write-once memory (WOM) is a storage device that consists of cells that can take on q
values, with the added constraint that rewrites can only increase a cell's value. A length-n, t …
values, with the added constraint that rewrites can only increase a cell's value. A length-n, t …
Dynamic threshold schemes for multi-level non-volatile memories
In non-volatile memories, reading stored data is typically done through the use of
predetermined fixed thresholds. However, due to problems commonly affecting such …
predetermined fixed thresholds. However, due to problems commonly affecting such …
Write amplification reduction in NAND flash through multi-write coding
A Jagmohan, M Franceschini… - 2010 IEEE 26th …, 2010 - ieeexplore.ieee.org
The block erase requirement in NAND Flash devices leads to the need for garbage
collection. Garbage collection results in write amplification, that is, to an increase in the …
collection. Garbage collection results in write amplification, that is, to an increase in the …
Rewriting codes for joint information storage in flash memories
Memories whose storage cells transit irreversibly between states have been common since
the start of the data storage technology. In recent years, flash memories have become a very …
the start of the data storage technology. In recent years, flash memories have become a very …
Multiple error-correcting WOM-codes
A Write Once Memory (WOM) is a storage medium with binary memory elements, called
cells, that can change from the zero state to the one state only once. Examples of WOMs …
cells, that can change from the zero state to the one state only once. Examples of WOMs …
Efficient two-write WOM-codes
A Write Once Memory (WOM) is a storage medium with binary memory elements, called
cells, that can change from the zero state to the one state only once. Examples of WOMs are …
cells, that can change from the zero state to the one state only once. Examples of WOMs are …
Error-correcting codes for flash coding
Q Huang, S Lin… - IEEE transactions on …, 2011 - ieeexplore.ieee.org
Flash memory is a nonvolatile computer storage device which consists of blocks of cells.
While increasing the voltage level of a single cell is fast and simple, reducing the level of a …
While increasing the voltage level of a single cell is fast and simple, reducing the level of a …
Position modulation code for rewriting write-once memories
Y Wu, A Jiang - IEEE Transactions on Information Theory, 2011 - ieeexplore.ieee.org
A write-once memory (wom) is a storage medium formed by a number of “write-once” bit
positions (wits), where each wit initially is in a “0” state and can be changed to a “1” state …
positions (wits), where each wit initially is in a “0” state and can be changed to a “1” state …
Multiple-write WOM-codes
A Write Once Memory (WOM) is a storage device that consists of cells that can take on q
possible linearly-ordered values, with the added constraint that rewrites can only increase a …
possible linearly-ordered values, with the added constraint that rewrites can only increase a …