Thermal processing in the subsecond range comprises modern, non-equilibrium annealing
techniques which allow various material modifications at the surface without affecting the …

Erbium-doped yttrium oxide nanotubes (Er3+: Y2O3 NTs) with 0− 100% do** levels were
synthesized by a hydrothermal procedure followed by a dehydration process from Er3+: Y …

Abstract SiO 2: Eu 3+ based bulk composites containing ZnO quantum dots were
synthesized by an in situ sol–gel process. The quantum dots homogeneously distributed …

Erbium doped ZnGa 2 O 4 spinel nanofilms are fabricated by atomic layer deposition on Si
substrates, the electroluminescence (EL) devices based on which present intense∼ 1.53 …

Abstract The electroluminescence (EL) at 1.54 µm of metal–oxide–semiconductor (MOS)
devices with Er 3+ ions embedded in the silicon-rich silicon oxide (SRSO) layer has been …

Near-infrared (NIR) light spectroscopy has been utilized generously in wide applications,
especially for plant growth supplements. However, providing an NIR light-emitting device …

The roles of amorphous Si nanoparticles in light-emitting diodes (LEDs) based on Er-doped
Si 1+ x O 2 films (x representing the degree of Si content, and varying widely from 0 to 4.50) …

Page 1 L. Rebohle W. Skorupa SPRINGER SERIES IN MATERIALS SCIENCE 142 Rare-Earth
Implanted MOS Devices for Silicon Photonics Microstructural, Electrical and Optoelectronic …

Silicon nitride films were deposited by plasma-enhanced chemical-vapour deposition. The
films were then implanted with erbium ions to a concentration of 8× 10 20 cm− 3. After high …

In this work, we demonstrated the fabrication of crack-free luminescent Er-doped silica
coatings sintered using a CO 2 laser. The silica sol-gel precursor with controllable rheology …