Aharonov–Bohm oscillations in Dirac semimetal Cd3As2 nanowires
Three-dimensional Dirac semimetals, three-dimensional analogues of graphene, are
unusual quantum materials with massless Dirac fermions, which can be further converted to …
unusual quantum materials with massless Dirac fermions, which can be further converted to …
Electron transport properties of atomic carbon nanowires between graphene electrodes
Long, stable, and free-standing linear atomic carbon wires (carbon chains) have been
carved out from graphene recently [Meyer et al. Nature (London) 2008, 454, 319; ** et al …
carved out from graphene recently [Meyer et al. Nature (London) 2008, 454, 319; ** et al …
Surface physics of semiconducting nanowires
Semiconducting nanowires (NWs) are firm candidates for novel nanoelectronic devices and
a fruitful playground for fundamental physics. Ultra-thin nanowires, with diameters below 10 …
a fruitful playground for fundamental physics. Ultra-thin nanowires, with diameters below 10 …
Enhanced sensing of nonpolar volatile organic compounds by silicon nanowire field effect transistors
Silicon nanowire field effect transistors (Si NW FETs) are emerging as powerful sensors for
direct detection of biological and chemical species. However, the low sensitivity of the Si NW …
direct detection of biological and chemical species. However, the low sensitivity of the Si NW …
Preparation of ultrathin nanowires using superfluid helium droplets
E Latimer, D Spence, C Feng, A Boatwright, AM Ellis… - Nano …, 2014 - ACS Publications
Direct preparation of long one-dimensional (1D) nanostructures with diameters< 10 nm
inside superfluid helium droplets is reported. Unlike conventional chemical synthetic …
inside superfluid helium droplets is reported. Unlike conventional chemical synthetic …
Simulation of junctionless Si nanowire transistors with 3 nm gate length
Inspired by recent experimental realizations and theoretical simulations of thin silicon
nanowire-based devices, we perform proof-of-concept simulations of junctionless gated Si …
nanowire-based devices, we perform proof-of-concept simulations of junctionless gated Si …
Experimental determination of conduction channels in atomic-scale conductors based on shot noise measurements
We demonstrate a general procedure for determining the conduction channels of quantum
conductors from shot noise measurements. This numerical approach allows multichannel …
conductors from shot noise measurements. This numerical approach allows multichannel …
Electrical performance of III-V gate-all-around nanowire transistors
P Razavi, G Fagas - Applied Physics Letters, 2013 - pubs.aip.org
The performance of III-V inversion-mode and junctionless nanowire field-effect transistors
are investigated using quantum simulations and are compared with those of silicon devices …
are investigated using quantum simulations and are compared with those of silicon devices …
A Dopant Replacement‐Driven Molten Salt Method toward the Synthesis of Sub‐5‐nm‐Sized Ultrathin Nanowires
Y Mao, X Yang, W Gong, J Zhang, T Pan, H Sun… - Small, 2020 - Wiley Online Library
The high‐temperature molten‐salt method is an important inorganic synthetic route to a wide
variety of morphological phenotypes. However, its utility is limited by the fact that it is …
variety of morphological phenotypes. However, its utility is limited by the fact that it is …
The Aharonov-Bohm oscillation in the BiSbTe3 topological insulator macroflake
SM Huang, PC Wang, C Lin, SY You, WC Lin… - Applied Physics …, 2018 - pubs.aip.org
We report the Aharonov-Bohm (AB) oscillation in the BiSbTe 3 topological insulator
macroflake. The magnetoresistance reveals periodic oscillations. The oscillation index …
macroflake. The magnetoresistance reveals periodic oscillations. The oscillation index …