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Suppressing Interfacial Layer Formation in ZrO2-Based Capacitors with TiN Electrodes via a MgO Thin-Film Oxygen Diffusion Barrier
The TiO x N y interfacial layer formed by an O3 reactant during the atomic layer deposition
(ALD) of ZrO2 on a TiN electrode is a challenge to further scaling dynamic random-access …
(ALD) of ZrO2 on a TiN electrode is a challenge to further scaling dynamic random-access …
Nucleation Enhancement and Area-Selective Atomic Layer Deposition of Ruthenium Using RuO4 and H2 Gas
MM Minjauw, H Rijckaert, IV Driessche… - Chemistry of …, 2019 - ACS Publications
Inherent substrate selectivity is reported for the thermal RuO4 (ToRuS)/H2 gas atomic layer
deposition (ALD) process on H-terminated Si (Si–H) versus SiO2. In situ spectroscopic …
deposition (ALD) process on H-terminated Si (Si–H) versus SiO2. In situ spectroscopic …
Mechanistically Informed Strategies for Site-Selective Atomic Layer Deposition
While atomic layer deposition (ALD) processes from across the periodic table have been
designed to deposit conformal thin films, an atomistic view of disparate substrate sites …
designed to deposit conformal thin films, an atomistic view of disparate substrate sites …
Growth characteristics and film properties of plasma-enhanced and thermal atomic-layer-deposited magnesium oxide thin films prepared using bis …
The continuous device scaling of dynamic random access memories has been increasing
demands for the development of dielectric materials with high dielectric constants and low …
demands for the development of dielectric materials with high dielectric constants and low …
Effect of Al2O3 Seed-Layer on the Dielectric and Electrical Properties of Ultrathin MgO Films Fabricated Using In Situ Atomic Layer Deposition
J Acharya, R Goul, D Romine… - ACS Applied Materials …, 2019 - ACS Publications
Metal/insulator/metal (M/I/M) trilayers of Al/MgO/Al with ultrathin MgO in the thickness range
of 2.20–4.40 nm were fabricated using in vacuo sputtering and atomic layer deposition …
of 2.20–4.40 nm were fabricated using in vacuo sputtering and atomic layer deposition …
[HTML][HTML] Role of ZnO and MgO interfaces on the growth and optoelectronic properties of atomic layer deposited Zn1− xMgxO films
P Gnanasambandan, N Adjeroud… - Journal of Vacuum …, 2022 - pubs.aip.org
Zn 1− x Mg x O films with very precise Mg content are of strong interest for the development
of buffer layers on copper-indium-gallium-sulfide solar cells. Atomic layer deposition (ALD) …
of buffer layers on copper-indium-gallium-sulfide solar cells. Atomic layer deposition (ALD) …
Amorphous Doped Indium Tin Oxide Thin‐Films by Atomic Layer Deposition. Insights into Their Structural, Electronic and Device Reliability
MI Büschges, V Trouillet, AC Dippel… - Advanced Materials …, 2024 - Wiley Online Library
Thin semiconducting films of magnesium doped indium‐and tin oxide are prepared by
thermal atomic layer deposition (ALD). The metal oxide films are deposited at 200° C from …
thermal atomic layer deposition (ALD). The metal oxide films are deposited at 200° C from …
Influences of oxygen source and substrate temperature on the unusual growth mechanism of atomic layer deposited magnesium oxide using bis (cyclopentadienyl) …
BW Wang, J Choi, HG Kim, SD Hyun, C Yoo… - Journal of Materials …, 2021 - pubs.rsc.org
This research reports on the atomic layer deposition (ALD) mechanism of MgO thin film
using bis (cyclopentadienyl) magnesium [Mg (Cp) 2] as the Mg-precursor and O3 or H2O as …
using bis (cyclopentadienyl) magnesium [Mg (Cp) 2] as the Mg-precursor and O3 or H2O as …
[HTML][HTML] In vacuo atomic layer deposition and electron tunneling characterization of ultrathin dielectric films for metal/insulator/metal tunnel junctions
Metal-insulator-metal tunnel junctions (MIMTJs) are an enabling technology for future
electronics including advanced computing, data storage, sensors, etc. MIMTJs are formed by …
electronics including advanced computing, data storage, sensors, etc. MIMTJs are formed by …
Atomic engineering of metastable BeO6 octahedra in a rocksalt framework
An atomic structure is widely recognized as the key that determines the physical properties
of a material. A critical challenge to engineer the atomic structure is that many useful crystals …
of a material. A critical challenge to engineer the atomic structure is that many useful crystals …