Towards high efficiency nanowire solar cells

G Otnes, MT Borgström - Nano Today, 2017 - Elsevier
Semiconductor nanowires are a class of materials recently gaining increasing interest for
solar cell applications. In this article we review the development of the field with a special …

Do** of semiconductor nanowires

J Wallentin, MT Borgström - Journal of Materials Research, 2011 - cambridge.org
A cornerstone in the successful application of semiconductor nanowire devices is controlled
impurity do**. In this review article, we discuss the key results in the field of semiconductor …

Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes

JK Qin, PY Liao, M Si, S Gao, G Qiu, J Jian, Q Wang… - Nature …, 2020 - nature.com
Tellurium can form nanowires of helical atomic chains. With their unique one-dimensional
van der Waals structure, these nanowires are expected to show physical and electronic …

Sulfur-doped triazine-conjugated microporous polymers for achieving the robust visible-light-driven hydrogen evolution

AM Elewa, AFM EL-Mahdy, MH Elsayed… - Chemical Engineering …, 2021 - Elsevier
Conjugated microporous polymers (CMPs) have emerged in recent years as prospective
materials for photocatalytic hydrogen production. The most common synthesis method for …

A general approach for sharp crystal phase switching in InAs, GaAs, InP, and GaP nanowires using only group V flow

S Lehmann, J Wallentin, D Jacobsson, K Deppert… - Nano …, 2013 - ACS Publications
III–V-based nanowires usually exhibit random mixtures of wurtzite (WZ) and zinc blende (ZB)
crystal structure, and pure crystal phase wires represent the exception rather than the rule. In …

III–V semiconductor single nanowire solar cells: a review

Z Li, HH Tan, C Jagadish, L Fu - Advanced Materials …, 2018 - Wiley Online Library
III–V semiconductor nanowires have gained intensive attention for solar cell applications
due to their unique geometrical, optical, and electrical properties, as well as improved …

Structure, energetics, and electronic states of III–V compound polytypes

F Bechstedt, A Belabbes - Journal of Physics: Condensed Matter, 2013 - iopscience.iop.org
Recently several hexagonal polytypes such as 2H, 4H, and 6H have been discovered for
conventional III–V semiconductor compounds in addition to the cubic 3C zinc-blende …

CuI Encapsulated within Single‐Walled Carbon Nanotube Networks with High Current Carrying Capacity and Excellent Conductivity

R Zhang, X Wang, Z Zhang, W Zhang… - Advanced Functional …, 2023 - Wiley Online Library
High current carrying capacity and high conductivity are two important indicators for
materials used in microscale electronics and inverters. However, it is challenging to obtain …

Untangling the electronic band structure of wurtzite GaAs nanowires by resonant Raman spectroscopy

B Ketterer, M Heiss, E Uccelli, J Arbiol… - ACS …, 2011 - ACS Publications
In semiconductor nanowires, the coexistence of wurtzite and zinc-blende phases enables
the engineering of the electronic structure within a single material. This presupposes an …

Electron trap** in InP nanowire FETs with stacking faults

J Wallentin, M Ek, LR Wallenberg, L Samuelson… - Nano …, 2012 - ACS Publications
Semiconductor III–V nanowires are promising components of future electronic and
optoelectronic devices, but they typically show a mixed wurtzite-zinc blende crystal structure …