This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …

Organic functionalization of non-oxidized silicon surfaces, while allowing for robust chemical
passivation of the inorganic substrate, is intended and expected to broaden the chemical …

A fundamental interaction for electrons is their hyperfine interaction (HFI) with nuclear spins.
HFI is well characterized in free atoms and molecules, and is crucial for purposes from …

Hydrogen-resist lithography with the tip of a scanning tunnelling microscope can be used to
fabricate atomic-scale dopant devices in silicon substrates and could potentially be used to …

Atomically precise, δ-doped structures forming electronic devices in Si have been routinely
fabricated in recent years by using depassivation lithography in a scanning tunneling …

Stone-Wales (SW) defects are widespread in graphene-like materials, which can affect
electrical properties of nanostructures. In this paper, the effects of SW defects and applied …

Spin-qubits based on impurities such as phosphorus in silicon (Si) have attractive attributes
for the development of quantum computing devices. Very long coherence times can be …

The bid for scalable physical qubits has attracted many possible candidate platforms. In
particular, spin‐based qubits in solid‐state form factors are attractive as they could …

Proposals for large-scale semiconductor spin-based quantum computers require high-
fidelity single-shot qubit readout to perform error correction and read out qubit registers at …

Using density functional theory and guided by extensive scanning tunneling microscopy
(STM) image data, we formulate a detailed mechanism for the dissociation of phosphine (PH …