Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review

J Ji, HM Kwak, J Yu, S Park, JH Park, H Kim, S Kim… - Nano …, 2023 - Springer
Remote epitaxy, which was discovered and reported in 2017, has seen a surge of interest in
recent years. Although the technology seemed to be difficult to reproduce by other labs at …

Graphene growth and properties on metal substrates

Y Dedkov, E Voloshina - Journal of Physics: Condensed Matter, 2015 - iopscience.iop.org
Graphene–metal interface as one of the interesting graphene-based objects attracts much
attention from both application and fundamental science points of view. This paper gives a …

[HTML][HTML] Production and processing of graphene and related materials

C Backes, AM Abdelkader, C Alonso… - 2D …, 2020 - iopscience.iop.org
We present an overview of the main techniques for production and processing of graphene
and related materials (GRMs), as well as the key characterization procedures. We adopt …

Residual metallic contamination of transferred chemical vapor deposited graphene

G Lupina, J Kitzmann, I Costina, M Lukosius… - ACS …, 2015 - ACS Publications
Integration of graphene with Si microelectronics is very appealing by offering a potentially
broad range of new functionalities. New materials to be integrated with the Si platform must …

Epitaxial growth of main group monoelemental 2D materials

D Zhou, H Li, N Si, H Li, H Fuchs… - Advanced Functional …, 2021 - Wiley Online Library
Since the discovery of graphene, 2D materials have attracted significant attention for their
unique properties. Monoelemental 2D materials (ME2DMs) are of particular interest …

Two-dimensional materials for electronic applications

MC Lemme, LJ Li, T Palacios, F Schwierz - Mrs Bulletin, 2014 - cambridge.org
This article reviews the potential of graphene and related two-dimensional (2D) materials for
applications in micro-and nanoelectronics. In addition to graphene, special emphasis is …

Graphene growth on Ge (100)/Si (100) substrates by CVD method

I Pasternak, M Wesolowski, I Jozwik, M Lukosius… - Scientific reports, 2016 - nature.com
The successful integration of graphene into microelectronic devices is strongly dependent
on the availability of direct deposition processes, which can provide uniform, large area and …

Chemical vapor deposited graphene: From synthesis to applications

S Kataria, S Wagner, J Ruhkopf, A Gahoi… - … status solidi (a), 2014 - Wiley Online Library
Graphene is a material with enormous potential for numerous applications. Therefore,
significant efforts are dedicated to large‐scale graphene production using a chemical vapor …

Metal-free CVD graphene synthesis on 200 mm Ge/Si (001) substrates

M Lukosius, J Dabrowski, J Kitzmann… - … applied materials & …, 2016 - ACS Publications
Good quality, complementary-metal-oxide-semiconductor (CMOS) technology compatible,
200 mm graphene was obtained on Ge (001)/Si (001) wafers in this work. Chemical vapor …

Large-area high-quality graphene on Ge (001)/Si (001) substrates

I Pasternak, P Dabrowski, P Ciepielewski, V Kolkovsky… - Nanoscale, 2016 - pubs.rsc.org
Various experimental data revealing large-area high-quality graphene films grown by the
CVD method on Ge (001)/Si (001) substrates are presented. SEM images have shown that …