State of the art in the development and application of gas cluster ion sources is considered.
The mechanisms of neutral cluster formation, the techniques applied to study their flows and …

Abstract Polycrystalline NiPd and Ni 5 Pd alloys were irradiated with argon gas cluster ion
beam and atomic ion beam. In situ XPS measurements showed surface enrichment with Ni …

A three-step treatment of Si wafers by gas cluster ion beam with decreasing energy was
used to improve the performance of surface smoothing. First, a high energy treatment at 15 …

A study of damage and the concentration of radiation-induced paramagnetic defects by He+
and Ar+ ion beam irradiation in porous silicon is presented. Porous silicon layers were …

Nanostructured silicon is irradiated by Si+ and He+ ions with energies of 200 and 150 keV,
respectively. Destruction of the structure of irradiated samples and the accumulation of …

A new research strategy that fixed the anodic electrical charge was proposed to investigate
the combined effects of the anodization current density and anodization time on the porous …

Experimental depth distributions of the concentration of implanted xenon ions depending on
their charge state and irradiation energy are presented. Xenon ions in charge states q= 1 …

Results of investigation of the mass spectra of secondary ions sputtered from bulk
(continuous) and porous silicon targets with various characteristic core particle dimensions …

This paper proposes the use of surfaces with a preformed ordered nanotopography to study
the mechanisms of the evolution of surface topography under ion beam irradiation. The …

Проведено облучение наноструктурированного кремния ионами Si $^{+} $ и He $^{+} $
с энергиями 200 и 150 кэВ соответственно. Методом комбинационного рассеяния …