The fundamentals and applications of ferroelectric HfO2
Since the first report of ferroelectricity in a Si-doped HfO2 film in 2011, HfO2-based materials
have attracted much interest from the ferroelectric materials and devices community …
have attracted much interest from the ferroelectric materials and devices community …
Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories
Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …
in the memory arena over the last two decades. Its dielectric properties have been …
Intrinsic ferroelectricity in Y-doped HfO2 thin films
Ferroelectric HfO2-based materials hold great potential for the widespread integration of
ferroelectricity into modern electronics due to their compatibility with existing Si technology …
ferroelectricity into modern electronics due to their compatibility with existing Si technology …
Many routes to ferroelectric HfO2: A review of current deposition methods
Although 10 years have passed since the initial report of ferroelectricity in hafnia (HfO 2),
researchers are still intensely fascinated by this material system and the promise it holds for …
researchers are still intensely fascinated by this material system and the promise it holds for …
Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO2 Thin Films
Since 2011, ferroelectric HfO2 has attracted growing interest in both fundamental and
application oriented groups. In this material, noteworthy wake‐up and fatigue effects alter …
application oriented groups. In this material, noteworthy wake‐up and fatigue effects alter …
Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering
A wake-up free Hf0. 5Zr0. 5O2 (HZO) ferroelectric film with the highest remnant polarization
(P r) value to date was achieved through tuning of the ozone pulse duration, the annealing …
(P r) value to date was achieved through tuning of the ozone pulse duration, the annealing …
Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices
Ferroelectricity in fluorite-structure oxides, such as (doped) HfO2 and ZrO2, and their solid
solution, nanolaminates, and superlattices has attracted increasing interest for future …
solution, nanolaminates, and superlattices has attracted increasing interest for future …
Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films
Hf1− xZrxO2 (x∼ 0.5–0.7) has been the leading candidate of ferroelectric materials with a
fluorite crystal structure showing highly promising compatibility with complementary metal …
fluorite crystal structure showing highly promising compatibility with complementary metal …
Thermodynamic and kinetic origins of ferroelectricity in fluorite structure oxides
Ferroelectricity in fluorite structure oxides such as HfO2 and ZrO2 has been intensively
studied since the first report on it in 2011. The ferroelectricity in this material system is …
studied since the first report on it in 2011. The ferroelectricity in this material system is …
Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress
The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic
phase of hafnia is proved. Epitaxial bilayers of Hf0. 5Zr0. 5O2 (HZO) and La0. 67Sr0 …
phase of hafnia is proved. Epitaxial bilayers of Hf0. 5Zr0. 5O2 (HZO) and La0. 67Sr0 …