Magnetic random-access memory (MRAM) based on voltage-controlled magnetic anisotropy
in magnetic tunnel junctions (MTJs) is a promising candidate for high-performance …

We investigated the voltage-controlled magnetic anisotropy (VCMA) in an ultrathin Ir-doped
Fe layer with a Co x Fe 1− x termination layer. The VCMA effect depends on the …

The ability to efficiently manipulate magnetization is of great significance for practical
applications of spin–orbit torque (SOT) devices. In this study, we report the voltage …

Multiple-valued logic (MVL) shows considerable advantages over binary logic in certain
applications because of the increased informational content of its signals, and hence …

To reduce the switching delay, area overhead, and power consumption in the magnetic
tunnel junction (MTJ)-based memories, this article presents a double data rate magnetic …

Radiation vulnerability and high power density are critical challenges in modern CMOS
processors. Spin-based devices like magnetic tunnel junction (MTJ) are among the …

Interfacial perpendicular magnetic anisotropy in the MgO/Co 2 FeAl heterostructure is
desired for technological applications, while the origin of the large interfacial anisotropy …

This article discusses the current state of development, open research opportunities, and
application perspectives of electric‐field‐controlled magnetic tunnel junctions that use the …

We study the modification of the magnetocrystalline anisotropy (MCA) of Co slabs induced
by several different conjugated molecular overlayers, ie, benzene, cyclooctatetraene …

The advent of two-dimensional (2D) magnetic materials significantly expand the scope of
voltage-controlled magnetization-switching scheme as their integration in diverse magnetic …