The effects of the compressive stress on the binding energy and the density of shallow-
donor impurity states in symmetrical G a A s/A lx Ga 1− x As double quantum wells are …

In this paper, we employed numerical modeling to investigate the influence of crucial
parameters, namely electric field, confinement parabolicity, compositions, and structure …

Using the finite element method, the binding energies of a hydrogenic shallow donor
impurity are investigated in a cubic GaAs/Ga 1− x Al x A s quantum dot structure with realistic …

The combined effects of hydrostatic pressure and temperature on donor impurity binding
energy in GaAs/Ga0. 7Al0. 3As double quantum well in the presence of the electric and …

We have studied the behavior of the binding energy and photoionization cross-section of a
donor-impurity in cylindrical-shape GaAs-Ga 0.7 Al 0.3 As quantum dots, under the effects of …

The ground state and a few excited state energies of a hydrogenic donor in a quantum well
are computed in the presence of pressure and temperature. The binding energies are …

Based on the effective mass approximation within a variational approach, we have
calculated the temperature effect on the donor binding energy, self-polarization (SP), and …

We have calculated the effects of hydrostatic pressure on the binding energies and density
of impurity states for shallow donors uniformly distributed in symmetrical GaAs-(Ga, Al) As …

In this work we make a predictive study on the binding energy of the ground state for
hydrogenic donor impurity in vertically-coupled quantum-dot structure, considering the …

A theoretical study of combined effects of the hydrostatic pressure and the electric field on
the subband ground state energy and on the normalized ground state binding energy of a …