Silicon carbide and its composites for nuclear applications–Historical overview
The goal of achieving higher thermal efficiency in nuclear power systems, whether fission or
fusion based, has invariably led to the study and development of refractory metals, ceramics …
fusion based, has invariably led to the study and development of refractory metals, ceramics …
Analytical potential for atomistic simulations of silicon, carbon, and silicon carbide
We present an analytical bond-order potential for silicon, carbon, and silicon carbide that
has been optimized by a systematic fitting scheme. The functional form is adopted from a …
has been optimized by a systematic fitting scheme. The functional form is adopted from a …
Promise and challenges of SiCf/SiC composites for fusion energy applications
RH Jones, L Giancarli, A Hasegawa, Y Katoh… - Journal of Nuclear …, 2002 - Elsevier
Silicon carbide fiber/silicon carbide matrix composites have been specified in several recent
fusion power plant design studies because of their high operating temperature (1000–1100° …
fusion power plant design studies because of their high operating temperature (1000–1100° …
Microstructural development in cubic silicon carbide during irradiation at elevated temperatures
Microstructural development in chemically vapor-deposited (CVD) high-purity beta-SiC
during neutron and self-ion irradiation at elevated temperatures was studied. The CVD SiC …
during neutron and self-ion irradiation at elevated temperatures was studied. The CVD SiC …
In-situ TEM investigations on the microstructural evolution of SiC fibers under ion irradiation: Amorphization and grain growth
S Xu, C Zheng, Y Bi, Q Mao, H Qin, X Li - Journal of the European Ceramic …, 2023 - Elsevier
SiC/SiC composites are attractive candidates for many nuclear systems. As reinforcements,
SiC fibers are critical to the in-service performance of composites. In this work, the …
SiC fibers are critical to the in-service performance of composites. In this work, the …
Atomistic study of intrinsic defect migration in 3C-SiC
Atomic-scale computer simulations, both molecular dynamics (MD) and the nudged-elastic
band methods, have been applied to investigate long-range migration of point defects in …
band methods, have been applied to investigate long-range migration of point defects in …
[HTML][HTML] Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC
Emerging wide bandgap semiconductor devices such as the ones built with SiC have the
potential to revolutionize the power electronics industry through faster switching speeds …
potential to revolutionize the power electronics industry through faster switching speeds …
Determining the thermal conductivity and phonon behavior of SiC materials with quantum accuracy via deep learning interatomic potential model
SiC is essential for next-generation semiconductors and nuclear plant components. Its
performance is strongly influenced by its thermal conductivity, which is highly sensitive to its …
performance is strongly influenced by its thermal conductivity, which is highly sensitive to its …
Empirical potential approach for defect properties in 3C-SiC
Defect energetics in silicon carbide (SiC) have been widely studied using Tersoff potentials,
but these potentials do not provide a good description of interstitial properties. In the present …
but these potentials do not provide a good description of interstitial properties. In the present …
Silicon carbide nanowires under external loads: An atomistic simulation study
MA Makeev, D Srivastava, M Menon - Physical Review B—Condensed Matter …, 2006 - APS
The nanomechanical response properties of 3 C-SiC nanowires are investigated using
molecular dynamics simulation with Tersoff bond-order interatomic potential. Under axial …
molecular dynamics simulation with Tersoff bond-order interatomic potential. Under axial …