We address degradation aspects of lattice-matched unpassivated InAlN/GaN high-electron-
mobility transistors (HEMTs). Stress conditions include an off-state stress, a semi-on stress …

We present the technology and performance of InAlN/AlN/GaN MOS HEMTs with gate
insulation and surface passivation using Zr or Hf. About 10-nm-thick high-dielectrics were …

In this work, we report an effective room-temperature passivation strategy for GaN-on-Si high-
electron-mobility transistors (HEMTs) to improve device stability by introducing a spin-coated …

The increasing demand for high-power and high-frequency electronics has led to the
development of new materials and devices. One such material is gallium nitride (GaN) …

This book systematically introduces physical characteristics and implementations of III-
nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on …

A measurement circuit for the characterization of trap** effects in GaN HEMTs is
presented. The circuit is based on the operating principle of separating the high-voltage …

III-nitrides based high electron-mobility transistors (HEMTs) are well-known excellent
candidates for high-power, radio-frequency (rf) and high-temperature applications. However …

Currently, the GaN-on-silicon high electron mobility transistor (HEMT) is a promising
candidate to replace the Si Metal Oxide Semiconductor Field Effect Transistor (MOSFET) for …

Hot-electron temperature (Te) in InAlN/GaN high-electron-mobility transistors (HEMTs) was
determined using electroluminescence spectroscopy as a function of gate voltage and …

The origin of hysteresis in capacitance-voltage (CV) characteristics was studied for Schottky
diodes prepared on Al Ga N∕ Ga N transistor structures with GaN (Fe) buffers. The …