Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer
D Shi, Y Wang, X Wu, Z Yang, X Li, J Yang, F Cao - Solid-State Electronics, 2021 - Elsevier
In this paper, an Al/Ti Schottky-electrode was fabricated on a 4H-SiC surface via sputtering,
and an Al 2 O 3 layer was inserted into the metal semiconductor contact-surface using …
and an Al 2 O 3 layer was inserted into the metal semiconductor contact-surface using …
The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes
Schottky diodes still attract researchers as they are used in various device applications. This
study provides I–V characteristics of Ti/n-GaAs (80–300 K). Higher barrier height (Φ B0) …
study provides I–V characteristics of Ti/n-GaAs (80–300 K). Higher barrier height (Φ B0) …
Electron trap** effects in SiC Schottky diodes: Review and comment
JR Nicholls - Microelectronics Reliability, 2021 - Elsevier
SiC devices exhibit a number of detrimental second order effects which are caused by
electrically active traps. The majority of studies into traps in SiC devices have been for SiC …
electrically active traps. The majority of studies into traps in SiC devices have been for SiC …
Investigation of electrical characterization of Al/HfO2/p-Si structures in wide temperature range
We studied the I–V characteristics of Al/HfO2/p-Si structure investigated in a wide
temperature range of 80–400 K. The zero-bias barrier height (Φ B) and ideality factor (n) …
temperature range of 80–400 K. The zero-bias barrier height (Φ B) and ideality factor (n) …
[HTML][HTML] Modelling the inhomogeneous SiC Schottky interface
For the first time, the IVT dataset of a Schottky diode has been accurately modelled,
parameterised, and fully fit, incorporating the effects of interface inhomogeneity, patch pinch …
parameterised, and fully fit, incorporating the effects of interface inhomogeneity, patch pinch …
Barrier height inhomogeneities induced anomaly in thermal sensitivity of Ni/4H-SiC Schottky diode temperature sensor
V Kumar, AS Maan, J Akhtar - … of Vacuum Science & Technology B, 2014 - pubs.aip.org
This paper presents the thermal sensitivity variation trend of Ni/4H-nSiC (0001) Schottky
diode based temperature sensor, equipped with floating metal guard ring and oxide field …
diode based temperature sensor, equipped with floating metal guard ring and oxide field …
The role of non-homogeneous barrier on the electrical performance of 15R–SiC Schottky diodes grown by in-situ RF sputtering
In the present work, we have demonstrated the impact of barrier inhomogeneities on the
electrical characteristics of silicon carbide (SiC) based Schottky barrier diodes (SBDs) …
electrical characteristics of silicon carbide (SiC) based Schottky barrier diodes (SBDs) …
Diameter dependent thermal sensitivity variation trend in Ni/4H-SiC Schottky diode temperature sensors
This report is on the diameter dependent thermal sensitivity variation trend of Ni/4H-nSiC
Schottky barrier diode (SBD) temperature sensors. Scaled SBDs of 2, 1.6, and 1.2 mm in …
Schottky barrier diode (SBD) temperature sensors. Scaled SBDs of 2, 1.6, and 1.2 mm in …
Dependence of Electrical Properties of Ni/n-GaP/Al Schottky Contacts on Measurement Temperature and Thermal Annealing
Abstract Ni/n-GaP/Al Schottky diodes have been fabricated and thermally annealed at 400°
C to obtain Schottky rectifying contacts with optimum performance and improve …
C to obtain Schottky rectifying contacts with optimum performance and improve …
Characterization technique for inhomogeneous 4H-SiC Schottky contacts: A practical model for high temperature behavior
In this paper, a characterization technique for 4H-SiC Schottky diodes with varying levels of
metal-semiconductor contact inhomogeneity is proposed. A macro-model, suitable for high …
metal-semiconductor contact inhomogeneity is proposed. A macro-model, suitable for high …