The influence of the surface and interfaces of semiconductor-metal Al/n+ Si-nSi/Al and Ag/n+
Si-nSi/Ag structures with different aluminum and silver contact coating layers on the level …

The possibility of usage of theoretically predicted additional 1/f noise component,
conditioned by presence of the built-in electric field, for the reliability estimation of …

" Methods and Materials for Remote Sensing: InfraredPhoto-Detectors,"" Radiometers and
Arrays" presents the basicprinciples and the guidelines for the design of IR and …

The results of a comparative literature analysis of internal electrical noises and signal-to-
noise ratio for nanoscale BioFET (biological field-effect transistor) and DNA …

The influence of the built-in electric field on the low-frequency current fluctuations in n-type
non-degenerate homogeneous semiconductors at presence of constant external electric …

The current–voltage characteristics (CVCs), photosensitivity, diffusion, generation–
recombination, low frequency noises and detectivity of the visible range 6H–SiC p+ nn+ …

The main types of internal noises in (bio-) chemical sensors on the base of electrolyte-
insulator-semiconductor structures, ion selective field-effect transistors and light addressable …

The influence of the built-in electric field (eg several potential barriers, impurity gradients,
etc) at presence of external crossed electric and magnetic fields on the level of low …

Одной их важнейших задач в теории полупроводников является проблема физического
происхождения 1//-флуктуации тока (или напря жения). Результаты обширных …