Mid-infrared integrated photonics on silicon: a perspective

H Lin, Z Luo, T Gu, LC Kimerling, K Wada… - …, 2017 - degruyter.com
The emergence of silicon photonics over the past two decades has established silicon as a
preferred substrate platform for photonic integration. While most silicon-based photonic …

Integrated lasers on silicon at communication wavelength: a progress review

N Li, G Chen, DKT Ng, LW Lim, J Xue… - Advanced Optical …, 2022 - Wiley Online Library
With the emerging trend of big data and internet of things, silicon (Si) photonics technology
has been developed and applied for high‐bandwidth data transmission. Contributed by the …

Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys

A Elbaz, D Buca, N von den Driesch, K Pantzas… - Nature …, 2020 - nature.com
Strained GeSn alloys are promising for realizing light emitters based entirely on group IV
elements. Here, we report GeSn microdisk lasers encapsulated with a SiN x stressor layer to …

Monolithic infrared silicon photonics: The rise of (Si) GeSn semiconductors

O Moutanabbir, S Assali, X Gong, E O'Reilly… - Applied Physics …, 2021 - pubs.aip.org
(Si) GeSn semiconductors are finally coming of age after a long gestation period. The
demonstration of device-quality epi-layers and quantum-engineered heterostructures has …

[HTML][HTML] An optically pumped 2.5 μm GeSn laser on Si operating at 110 K

S Al-Kabi, SA Ghetmiri, J Margetis, T Pham… - Applied Physics …, 2016 - pubs.aip.org
This paper reports the demonstration of optically pumped GeSn edge-emitting lasers grown
on Si substrates. The whole device structures were grown by an industry standard chemical …

GeSn lasers covering a wide wavelength range thanks to uniaxial tensile strain

J Chrétien, N Pauc, F Armand Pilon, M Bertrand… - Acs …, 2019 - ACS Publications
Silicon photonics continues to progress tremendously, both in near-infrared
datacom/telecoms and in mid-IR optical sensing, despite the fact a monolithically integrated …

Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K

J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou… - ACs …, 2017 - ACS Publications
A Si-based monolithic laser is strongly desired for the full integration of Si-photonics. Lasing
from the direct bandgap group-IV GeSn alloy has opened a new avenue, different from the …

Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K

V Reboud, A Gassenq, N Pauc, J Aubin… - Applied Physics …, 2017 - pubs.aip.org
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the
prospect of efficient laser sources monolithically integrated on a Si photonic platform. For …

Lasing in strained germanium microbridges

FT Armand Pilon, A Lyasota, YM Niquet… - Nature …, 2019 - nature.com
Germanium has long been regarded as a promising laser material for silicon based opto-
electronics. It is CMOS-compatible and has a favourable band structure, which can be tuned …

Low-threshold optically pumped lasing in highly strained germanium nanowires

S Bao, D Kim, C Onwukaeme, S Gupta… - Nature …, 2017 - nature.com
The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the
key to the realization of fully functional photonic-integrated circuits. Despite several years of …