Mid-infrared integrated photonics on silicon: a perspective
The emergence of silicon photonics over the past two decades has established silicon as a
preferred substrate platform for photonic integration. While most silicon-based photonic …
preferred substrate platform for photonic integration. While most silicon-based photonic …
Integrated lasers on silicon at communication wavelength: a progress review
With the emerging trend of big data and internet of things, silicon (Si) photonics technology
has been developed and applied for high‐bandwidth data transmission. Contributed by the …
has been developed and applied for high‐bandwidth data transmission. Contributed by the …
Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
Strained GeSn alloys are promising for realizing light emitters based entirely on group IV
elements. Here, we report GeSn microdisk lasers encapsulated with a SiN x stressor layer to …
elements. Here, we report GeSn microdisk lasers encapsulated with a SiN x stressor layer to …
Monolithic infrared silicon photonics: The rise of (Si) GeSn semiconductors
(Si) GeSn semiconductors are finally coming of age after a long gestation period. The
demonstration of device-quality epi-layers and quantum-engineered heterostructures has …
demonstration of device-quality epi-layers and quantum-engineered heterostructures has …
[HTML][HTML] An optically pumped 2.5 μm GeSn laser on Si operating at 110 K
This paper reports the demonstration of optically pumped GeSn edge-emitting lasers grown
on Si substrates. The whole device structures were grown by an industry standard chemical …
on Si substrates. The whole device structures were grown by an industry standard chemical …
GeSn lasers covering a wide wavelength range thanks to uniaxial tensile strain
Silicon photonics continues to progress tremendously, both in near-infrared
datacom/telecoms and in mid-IR optical sensing, despite the fact a monolithically integrated …
datacom/telecoms and in mid-IR optical sensing, despite the fact a monolithically integrated …
Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K
A Si-based monolithic laser is strongly desired for the full integration of Si-photonics. Lasing
from the direct bandgap group-IV GeSn alloy has opened a new avenue, different from the …
from the direct bandgap group-IV GeSn alloy has opened a new avenue, different from the …
Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K
V Reboud, A Gassenq, N Pauc, J Aubin… - Applied Physics …, 2017 - pubs.aip.org
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the
prospect of efficient laser sources monolithically integrated on a Si photonic platform. For …
prospect of efficient laser sources monolithically integrated on a Si photonic platform. For …
Lasing in strained germanium microbridges
Germanium has long been regarded as a promising laser material for silicon based opto-
electronics. It is CMOS-compatible and has a favourable band structure, which can be tuned …
electronics. It is CMOS-compatible and has a favourable band structure, which can be tuned …
Low-threshold optically pumped lasing in highly strained germanium nanowires
The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the
key to the realization of fully functional photonic-integrated circuits. Despite several years of …
key to the realization of fully functional photonic-integrated circuits. Despite several years of …