The radial junction (RJ) architecture has proven beneficial for the design of a new
generation of high performance thin film photovoltaics. We herein carry out a comprehensive …

We have compared the absorption in InP core–shell nanowire p–i–n junctions in lateral and
vertical orientation. Arrays of vertical core–shell nanowires with 400 nm pitch and 280 nm …

The data on growth peculiarities and physical properties of GaAs insertions embedded in
AlGaAs nanowires grown on different (1 1 1) substrates by Au-assisted molecular beam …

Thanks to their special interaction with light, semiconductor nanowires have opened new
avenues in photonics, quantum optics and solar energy harvesting. One of the major …

Semiconductor nanomembranes are promising systems for many applications, since the
band structure of a given material can be tailored to achieve specific configurations, which …

Представлены результаты экспериментальных исследований влияния дозы ионов Ga+
при ионно-лучевой обработке поверхности Si (111) методом фокусированных ионных …

Представлены результаты экспериментальных исследований синтеза методом
молекулярно-пучковой эпитаксии AlGaAs-нитевидных нанокристаллов с InGaAs …

Впервые продемонстрирована принципиальная возможность роста A $^{\mathrm {III}} $
B $^{\mathrm {V}} $ соединений на примере GaAs, AlGaAs и InAs нитевидных …

The possibility in principle of growing III–V GaAs, AlGaAs, and InAs nanowires (NWs) on a
silicon substrate with a nanometer buffer layer of silicon carbide is demonstrated for the first …

Esta é uma dissertação dividida em três trabalhos, nos quais técnicas de difração de raios-
x, simulação por elementos finitos e fotoluminescência foram utilizadas para determinar …