Recent advances and future prospects for memristive materials, devices, and systems
Memristive technology has been rapidly emerging as a potential alternative to traditional
CMOS technology, which is facing fundamental limitations in its development. Since oxide …
CMOS technology, which is facing fundamental limitations in its development. Since oxide …
Noise tailoring in memristive filaments
B Santa, Z Balogh, L Posa, D Krisztian… - … applied materials & …, 2021 - ACS Publications
In this study, the possibilities of noise tailoring in filamentary resistive switching memory
devices are investigated. To this end, the resistance and frequency scaling of the low …
devices are investigated. To this end, the resistance and frequency scaling of the low …
[HTML][HTML] Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier
This work addresses the thermal stability of bipolar resistive switching in yttrium oxide-based
resistive random access memory revealed through the temperature dependence of the DC …
resistive random access memory revealed through the temperature dependence of the DC …
Revealing the quantum nature of the voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devices
In this work, the quasi-analog to discrete transition occurring in the current–voltage
characteristic of oxygen engineered yttrium oxide-based resistive random-access memory …
characteristic of oxygen engineered yttrium oxide-based resistive random-access memory …
1/f noise spectroscopy and noise tailoring of nanoelectronic devices
Z Balogh, G Mezei, L Pósa, B Sánta, A Magyarkuti… - Nano …, 2021 - iopscience.iop.org
In this paper, we review the 1/f-type noise properties of nanoelectronic devices focusing on
three demonstrative platforms: resistive switching memories, graphene nanogaps and single …
three demonstrative platforms: resistive switching memories, graphene nanogaps and single …
Resistive Switching in a MoSe2-Based Memory Device Investigated Using Conductance Noise Spectroscopy
Resistive random access memory (RRAM) devices are widely considered promising
candidates for future memory and logic applications. Though their excellent performances …
candidates for future memory and logic applications. Though their excellent performances …
[HTML][HTML] Oxide thickness-dependent resistive switching characteristics of Cu/HfO2/Pt ECM devices
HfO 2-based resistive random-access memory devices are promising candidates for new
memory and computing applications. Hereby, scaling of the devices is a key issue, where …
memory and computing applications. Hereby, scaling of the devices is a key issue, where …
Enhanced switching ratio of sol–gel-processed Y2O3 RRAM device by suppressing oxygen vacancy formation at high annealing temperatures
Sol–gel-processed Y 2 O 3 films were used as an active-channel layer for resistive switching
memory (RRAM) devices. The influence of post-annealing temperature on structural …
memory (RRAM) devices. The influence of post-annealing temperature on structural …
Mg dopant induced ultra-high HRS resistance and striking switching window characteristics in amorphous Y2O3 film‐based memristors
Y Zhu, Z Guo, M Chen, P Zhang, P Shao, D Luo… - Applied Physics …, 2023 - pubs.aip.org
Y 2 O 3 has attracted attention as the representative emerging candidate of a resistive
switching (RS) medium in memristors due to its excellent electrical properties and good …
switching (RS) medium in memristors due to its excellent electrical properties and good …
Methods in fluctuation (noise) spectroscopy and continuous analysis for high-throughput measurements
T Thyzel, M Kopp, J Pieper, T Stadler… - Measurement Science …, 2024 - iopscience.iop.org
Fluctuation (noise) spectroscopy is widely used to investigate the low-frequency dynamics of
charge carriers in condensed-matter systems, aiming to (i) improve the performance of micro …
charge carriers in condensed-matter systems, aiming to (i) improve the performance of micro …