After 50 years of Moore's Law, Si CMOS, the mainstream logic technology, is on a course of
diminishing returns. The use of new semiconductor channel materials with improved …

III-V semiconductors, especially InAs, have much higher electron mobilities than Si and have
been considered as promising candidates for n-channel materials for post-Si low-power …

Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic
device roadmap to further improve future performance increases of integrated circuits is …

III–V semiconductors have attractive transport properties suitable for low-power, high-speed
complementary metal–oxide-semiconductor (CMOS) implementation, but major challenges …

We demonstrate a vertical InAs nanowire MOSFET integrated on Si substrate with an
extrinsic peak cut-off frequency of 103 GHz and a maximum oscillation frequency of 155 …

III–V compound semiconductors offer a path to continue Moore's law due to their excellent
electron transport properties. One major challenge, integrating III–V's on Si, can be …

The ever-growing demand on high-performance electronics has generated transistors with
very impressive figures of merit (Radosavljevic et al., IEEE Int. Devices Meeting 2009, 1–4 …

A novel method that reveals the spatial distribution of border traps in III-V metal-oxide-
semiconductor field-effect transistors (MOSFETs) is presented. The increase in …

Wafer-scale defect-free planar III–V nanowire (NW) arrays with∼ 100% yield and precisely
defined positions are realized via a patterned vapor–liquid–solid (VLS) growth method …

III–V nanowire transistors are promising candidates for very high frequency electronics
applications. The improved electrostatics originating from the gate-all-around geometry …