Energy-efficient computing at cryogenic temperatures
Increasing demand for data-intense computing applications—such as artificial intelligence,
large language models and high-performance computing—has created a need for …
large language models and high-performance computing—has created a need for …
[HTML][HTML] Origin of the Temperature Dependence of Gate-Induced Drain Leakage-Assisted Erase in Three-Dimensional nand Flash Memories
DG Refaldi, G Malavena, L Chiavarone, AS Spinelli… - Micromachines, 2024 - mdpi.com
Through detailed experimental and modeling activities, this paper investigates the origin of
the temperature dependence of the Erase operation in 3D nand flash arrays. First of all …
the temperature dependence of the Erase operation in 3D nand flash arrays. First of all …
Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures
The effects of defects in In 0.47 Ga 0.53 As/Al 2 O 3/Ni metal-oxide-semiconductor (MOS)
stacks at cryogenic temperatures are investigated. The MOS stacks exhibit a hysteresis in …
stacks at cryogenic temperatures are investigated. The MOS stacks exhibit a hysteresis in …
Cryogenic Behaviors of 65nm Transistor: On-State IV and Parameters
PS Huang, S Shah, AA Sharka… - … IEEE Workshop on …, 2024 - ieeexplore.ieee.org
In this paper, the trend and variability of minimal size 65nm NMOS and PMOS transistors are
measured and analyzed from 292K to 9.5 K (for PMOS) and 4.2 K (for NMOS). The changes …
measured and analyzed from 292K to 9.5 K (for PMOS) and 4.2 K (for NMOS). The changes …