At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …

We investigate a number of issues related to the application of the envelope-function
method to calculate confined-state energies and subband structure in quantum-well …

We present a detailed Monte Carlo simulation of electron transport incorporating both Γ-and
X-valley states in GaAs-based quantum cascade lasers (QCLs). Γ states are calculated …

In response to the current intensive scientific and commercial interest in nitride
semiconductors, several recent works have reviewed their material and physical properties …

We develop a self-consistent solution of the Schrödinger and Poisson equations in
semiconductor heterostructures with arbitrary do** profiles and layer geometries. An …

Heterostructures with biaxially compressed InAsSb are being considered as active regions
for midwave infrared diode lasers. Quantum wells of biaxially compressed InAs1− x Sb x (x≊ …

A transfer matrix method is presented for the development of solutions for multicomponent
diffusion couples containing any number of components. Expressions are derived for the …

Theory and optimisation of radiative recombination in broken-gap InAs/GaSb superlattices -
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ZWEIDIMENSIONALE, QUASI-ZWEIDIMENSIONALE STRUKTUR (PHYSIK DER
KONDENSIERTEN MATERIE); MIKROSTRUKTUR VON MOLEKULARSYSTEMEN …

Strained-layer superlattices (SLS's) with biaxially compressed InAs 1− x Sb x were
characterized using magnetophotoluminescence and compared with unstrained InAs 1− x …