Worldwide efforts are underway to integrate semiconductors and magnetic materials, aiming
to create a revolutionary and energy-efficient information technology in which digital data …

In silicon spintronics, the unique qualities of ferromagnetic materials are combined with
those of silicon, aiming at creating an alternative, energy-efficient information technology in …

We present a symmetry analysis of electronic band structure including spin-orbit interaction
close to the insulating gap edge in monolayer black phosphorus (“phosphorene”) …

We study all of the leading-order contributions to spin relaxation of conduction electrons in
silicon due to the electron-phonon interaction. Using group theory, the k· p perturbation …

We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin
properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge …

Electron spin attracts much attention as an alternative to the electron charge degree of
freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon …

The observed dependence of spin relaxation on the identity of the donor atom in n-type
silicon has remained without explanation for decades and poses a long-standing open …

We investigate the intrinsic spin relaxation of conduction electrons in germanium due to
electron-phonon scattering. We derive intravalley and intervalley spin-flip matrix elements …

The electronic structure of (group-III) metal-monochalcogenide monolayers exhibits many
unusual features. Some, such as the unusually distorted upper valence-band dispersion we …

We experimentally study temperature-dependent spin relaxation including lateral spin
diffusion in heavily doped n-type silicon (n+-Si) layers by measuring nonlocal …