This review focuses on the emerging field of core–multishell (CMS) semiconductor
nanowires (NWs). In these kinds of wires, a NW grown vertically on a substrate acts as a …

Semiconductor nanowire (NW) lasers provide significant potential to create a new
generation of lasers and on-chip coherent light sources by virtue of their ability to operate as …

Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …

The realisation of photonic devices for different energy ranges demands materials with
different bandgaps, sometimes even within the same device. The optimal solution in terms of …

Reliable technologies for the monolithic integration of lasers onto silicon represent the holy
grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III …

Telecom-band single nanowire lasers made by the bottom-up vapor-liquid-solid approach,
which is technologically important in optical fiber communication systems, still remain …

We demonstrate the epitaxial coating of GaN NWs with an epitaxial ZnO shell by atomic
layer deposition at 300° C. Scanning transmission electron microscopy proves a sharp and …

Develo** uncooled photodetectors at midwavelength infrared (MWIR) is critical for various
applications including remote sensing, heat seeking, spectroscopy, and more. In this study …

Surface effects strongly dominate the intrinsic properties of semiconductor nanowires (NWs),
an observation that is commonly attributed to the presence of surface states and their …

In this work, we demonstrate an InAs nanowire photodetector at short-wavelength infrared
(SWIR) composed of vertically oriented selective-area InAs nanowire photoabsorber arrays …