Recent advances in negative capacitance FinFETs for low-power applications: a review

V Chauhan, DP Samajdar - IEEE Transactions on Ultrasonics …, 2021 - ieeexplore.ieee.org
In the contemporary era of Internet-of-Things (IoT), there is an extensive search for
competent devices which can operate at ultralow voltage supply. Due to the restriction of …

Beyond Moore's law–A critical review of advancements in negative capacitance field effect transistors: A revolution in next-generation electronics

S Valasa, VR Kotha, N Vadthiya - Materials Science in Semiconductor …, 2024 - Elsevier
Conventional FETs, although serving as the backbone of modern electronics, have
encountered fundamental limits in power efficiency due to the Boltzmann limit. Negative …

Numerical investigation of short-channel effects in negative capacitance MFIS and MFMIS transistors: Subthreshold behavior

G Pahwa, A Agarwal… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
We present a detailed TCAD analysis of the impact of length scaling and the associated
short-channel effects in the subthreshold regime of the two classes of double-gate negative …

Physical insights on negative capacitance transistors in nonhysteresis and hysteresis regimes: MFMIS versus MFIS structures

G Pahwa, T Dutta, A Agarwal… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
We present a comprehensive comparison of the two different types of ferroelectric negative
capacitance FET (NCFET) structures: metal-ferroelectric-metal-insulator-semiconductor …

Device-circuit analysis of ferroelectric FETs for low-power logic

S Gupta, M Steiner, A Aziz, V Narayanan… - … on Electron Devices, 2017 - ieeexplore.ieee.org
Ferroelectric FETs (FEFETs) are emerging devices with an immense potential to replace
conventional MOSFETs by virtue of their steep switching characteristics. The ferroelectric …

Compact model for ferroelectric negative capacitance transistor with MFIS structure

G Pahwa, T Dutta, A Agarwal… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
We present a physics-based compact model for a ferroelectric negative capacitance FET
(NCFET) with a metal-ferroelectric-insulator-semiconductor (MFIS) structure. The model is …

Negative capacitance transistor to address the fundamental limitations in technology scaling: Processor performance

H Amrouch, G Pahwa, AD Gaidhane, J Henkel… - IEEE …, 2018 - ieeexplore.ieee.org
Negative capacitance field-effect transistor (NCFET) addresses one of the key fundamental
limits in technology scaling, akin to the non-scalable Boltzmann factor, by offering a sub …

Insights into the operation of negative capacitance FinFET for low power logic applications

RK Jaisawal, PN Kondekar, S Yadav, P Upadhyay… - Microelectronics …, 2022 - Elsevier
In the incessant search to overcome the power densities and energy efficient limitations,
performance matrix of emerging electronic devices are being explored inevitably to find the …

Performance evaluation of 7-nm node negative capacitance FinFET-based SRAM

T Dutta, G Pahwa, AR Trivedi, S Sinha… - IEEE Electron …, 2017 - ieeexplore.ieee.org
We compare the performance of static random access memory (SRAM) cells based on
negative capacitance (NC) FinFETs and reference FinFETs at the 7-nm technology node …

Exploration of negative capacitance in gate-all-around Si nanosheet transistors

FI Sakib, MA Hasan, M Hossain - IEEE Transactions on Electron …, 2020 - ieeexplore.ieee.org
Gate-all-around (GAA) nanosheet (NS) field-effect transistors (FETs) are the most promising
candidates to replace FinFETs and nanowire (NW) FETs in future technology nodes owing …