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Topotactic transition: A promising opportunity for creating new oxides
Z Meng, H Yan, P Qin, X Zhou, X Wang… - Advanced Functional …, 2023 - Wiley Online Library
Topotactic transition is a structural phase change in a matrix crystal lattice mediated by the
ordered loss/gain and rearrangement of atoms, leading to unusual coordination …
ordered loss/gain and rearrangement of atoms, leading to unusual coordination …
Hardware implementation of neuromorphic computing using large‐scale memristor crossbar arrays
Y Li, KW Ang - Advanced Intelligent Systems, 2021 - Wiley Online Library
Brain‐inspired neuromorphic computing is a new paradigm that holds great potential to
overcome the intrinsic energy and speed issues of traditional von Neumann based …
overcome the intrinsic energy and speed issues of traditional von Neumann based …
Analog memristive synapse based on topotactic phase transition for high-performance neuromorphic computing and neural network pruning
Inspired by the human brain, nonvolatile memories (NVMs)–based neuromorphic computing
emerges as a promising paradigm to build power-efficient computing hardware for artificial …
emerges as a promising paradigm to build power-efficient computing hardware for artificial …
A ferrite synaptic transistor with topotactic transformation
Hardware implementation of artificial synaptic devices that emulate the functions of
biological synapses is inspired by the biological neuromorphic system and has drawn …
biological synapses is inspired by the biological neuromorphic system and has drawn …
Flexible strategy of epitaxial oxide thin films
J Huang, W Chen - Iscience, 2022 - cell.com
Applying functional oxide thin films to flexible devices is of great interests within the rapid
development of information technology. The challenges involve the contradiction between …
development of information technology. The challenges involve the contradiction between …
An electroforming-free, analog interface-type memristor based on a SrFeOx epitaxial heterojunction for neuromorphic computing
Distinct from the conductive filament-type counterparts, the interface-type resistive switching
(RS) devices are electroforming-free and exhibit bidirectionally continuous conductance …
(RS) devices are electroforming-free and exhibit bidirectionally continuous conductance …
Control of oxygen vacancy ordering in brownmillerite thin films via ionic liquid gating
Oxygen defects and their atomic arrangements play a significant role in the physical
properties of many transition metal oxides. The exemplary perovskite SrCoO3-δ (P-SCO) is …
properties of many transition metal oxides. The exemplary perovskite SrCoO3-δ (P-SCO) is …
Topotactic Metal–Insulator Transition in Epitaxial SrFeOx Thin Films
Topotactic phase transformation enables structural transition without losing the crystalline
symmetry of the parental phase and provides an effective platform for elucidating the redox …
symmetry of the parental phase and provides an effective platform for elucidating the redox …
Topotactic phase transition driving memristive behavior
Redox‐based memristive devices are one of the most attractive candidates for future
nonvolatile memory applications and neuromorphic circuits, and their performance is …
nonvolatile memory applications and neuromorphic circuits, and their performance is …
Mechanisms of Hysteresis and Reversibility across the Voltage-Driven Perovskite–Brownmillerite Transformation in Electrolyte-Gated Ultrathin La0.5Sr0.5CoO3−δ
WM Postiglione, G Yu, V Chaturvedi… - … applied materials & …, 2024 - ACS Publications
Perovskite cobaltites have emerged as archetypes for electrochemical control of materials
properties in electrolyte-gate devices. Voltage-driven redox cycling can be performed …
properties in electrolyte-gate devices. Voltage-driven redox cycling can be performed …