A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …
We discuss their material and electronic properties with an emphasis on the crystal …
Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
T Kamimura, K Sasaki, M Hoi Wong… - Applied Physics …, 2014 - pubs.aip.org
The band alignment of Al 2 O 3/n-Ga 2 O 3 was investigated by x-ray photoelectron
spectroscopy (XPS). With a band gap of 6.8±0.2 eV measured for Al 2 O 3, the conduction …
spectroscopy (XPS). With a band gap of 6.8±0.2 eV measured for Al 2 O 3, the conduction …
Electron band alignment at interfaces of semiconductors with insulating oxides: An internal photoemission study
VV Afanas′ ev - Advances in Condensed Matter Physics, 2014 - Wiley Online Library
Evolution of the electron energy band alignment at interfaces between different
semiconductors and wide‐gap oxide insulators is examined using the internal …
semiconductors and wide‐gap oxide insulators is examined using the internal …
Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy
We determined the band alignment of a graphene-insulator-semiconductor structure using
internal photoemission spectroscopy. From the flatband voltage and Dirac voltage, we infer …
internal photoemission spectroscopy. From the flatband voltage and Dirac voltage, we infer …
Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions
Unlike silicon and traditional III-V semiconductors, the III-nitrides exhibit high spontaneous
and piezoelectric polarization charges at epitaxial polar heterojunctions. In the process of …
and piezoelectric polarization charges at epitaxial polar heterojunctions. In the process of …
Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates
We report experimental and theoretical studies of defects producing fixed charge within Al 2
O 3 layers grown by atomic layer deposition (ALD) on In 0.53 Ga 0.47 As (001) substrates …
O 3 layers grown by atomic layer deposition (ALD) on In 0.53 Ga 0.47 As (001) substrates …
Versatility of bilayer metal oxide coatings on silver nanowire networks for enhanced stability with minimal transparency loss
Silver nanowire (AgNW) networks have been lately much investigated thanks to their
physical properties and are therefore foreseen to play a key role in many industrial devices …
physical properties and are therefore foreseen to play a key role in many industrial devices …
Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga-and N-face gallium nitride
The effects of surface pretreatment, dielectric growth, and post deposition annealing on
interface electronic structure and polarization charge compensation of Ga-and N-face bulk …
interface electronic structure and polarization charge compensation of Ga-and N-face bulk …
Inverted organic solar cells with ITO electrodes modified with an ultrathin Al 2 O 3 buffer layer deposited by atomic layer deposition
Y Zhou, H Cheun, WJ Potscavage Jr… - Journal of Materials …, 2010 - pubs.rsc.org
We report on the properties of inverted polymer solar cells using an ultrathin Al2O3 buffer
layer on indium tin oxide (ITO). The ultrathin Al2O3 layer, deposited by the atomic layer …
layer on indium tin oxide (ITO). The ultrathin Al2O3 layer, deposited by the atomic layer …
Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride
Al 2 O 3 films, HfO 2 films, and HfO 2/Al 2 O 3 stacked structures were deposited on n-type,
Ga-face, GaN wafers using plasma-enhanced atomic layer deposition (PEALD). The wafers …
Ga-face, GaN wafers using plasma-enhanced atomic layer deposition (PEALD). The wafers …