EUV-induced hydrogen desorption as a step towards large-scale silicon quantum device patterning

P Constantinou, TJZ Stock, LT Tseng, D Kazazis… - Nature …, 2024 - nature.com
Atomically precise hydrogen desorption lithography using scanning tunnelling microscopy
(STM) has enabled the development of single-atom, quantum-electronic devices on a …

Resistless EUV lithography: Photon-induced oxide patterning on silicon

LT Tseng, P Karadan, D Kazazis, PC Constantinou… - Science …, 2023 - science.org
In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated
silicon (100) surface in the absence of a photoresist. EUV lithography is the leading …

Direct Observation of 2DEG States in Shallow Si: Sb δ-Layers

FS Strand, SP Cooil, QT Campbell… - The Journal of …, 2025 - ACS Publications
We investigate the electronic structure of high-density layers of Sb dopants in a silicon host,
so-called Si: Sb δ-layers. We show that, in spite of the known challenges in producing highly …

Probing the Atomic Arrangement of Subsurface Dopants in a Silicon Quantum Device Platform

HI Røst, E Tosi, FS Strand, AC Åsland… - … Applied Materials & …, 2023 - ACS Publications
High-density structures of subsurface phosphorus dopants in silicon continue to garner
interest as a silicon-based quantum computer platform; however, a much-needed …

Discrete, Shallow Do** of Semiconductors via Cylinder‐Forming Block Copolymer Self‐Assembly

Y Zhang, SPO Danielsen, BC Popere… - Macromolecular …, 2022 - Wiley Online Library
Block copolymer (BCP) self‐assembly‐assisted do** for semiconductors is used to
achieve discrete do** with nanometer‐scale junction depth, high throughput, and large …

Direct measurement of 2DEG states in shallow Si:Sb -layers

FS Strand, SP Cooil, QT Campbell… - ar**-applications/10.1117/12.2514830.short" data-clk="hl=nl&sa=T&ct=res&cd=9&d=1749398823439565218&ei=Emy9Z5z1BPqu6rQPqLq_sQU" data-clk-atid="ogGaEfYcRxgJ" target="_blank">Ultra-thin conformal coating for spin-on do** applications
M Li, B Popere, P Trefonas, AT Heitsch… - Advances in …, 2019 - spiedigitallibrary.org
As devices become ever smaller and more sophisticated, there is also a general need for
creating high quality defect-free thin coatings of polymers on 3-dimensional wafer …