Spintronics is one of the growing research areas which has the capability to overcome the
issues of static power dissipation and volatility suffered by the complementary metal-oxide …

Featured Application Non-volatile magnetic tunnel junction-based magnetoresistive random
access memory as reliable, high energy efficiency Internet of Things (IoTs) node memory …

Bio-inspired neuromorphic computing has aroused great interest due to its potential to
realize on-chip learning with bio-plausibility and energy efficiency. Realizing spike-timing …

Field-programmable gate arrays (FPGAs) based on static random access memory (SRAM)
are more common than other types, including flash and anti-fuse, because of their infinite …

The emerging spin-transfer torque magnetic tunnel junction (STT-MTJ) technology exhibits
interesting stochastic behavior combined with small area and low operation energy. It is …

The aim of this paper is to introduce a compact model for perpendicular spin-transfer torque
(STT)-magnetic tunnel junctions (MTJs) implemented in Verilog-A to assure easy integration …

Spin transfer torque magnetic random access memory (STT-MRAM) possesses many
desirable properties such as nonvolatility, fast access speed, unlimited endurance, and …

In this article, we present a novel logic design style, namely, memristor overwrite logic
(MOL), associated with an original MOL-based computational memory. MOL relies on a fully …

A great deal of effort has recently been devoted to extending the usage of memristor
technology from memory to computing. Memristor-based logic design is an emerging …

Emerging memories have been developed to achieve energy efficiency target in the Internet
of Things era. Spin transfer torque magnetic tunnel junction (STT-MTJ)-based nonvolatile …