Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Ion beam induced surface and interface engineering
IP Jain, G Agarwal - Surface Science Reports, 2011 - Elsevier
The injection of material into a target specimen in the form of an accelerated ion beam offers
a most valuable tool for altering its physical, chemical, structural, surface and interface …
a most valuable tool for altering its physical, chemical, structural, surface and interface …
Swift heavy ion-induced modification and track formation in materials
D Kanjilal - Current Science, 2001 - JSTOR
Swift heavy ions (SHI) lose energy in materials mainly through inelastic collisions with the
atomic electrons. Along the trajectory, a trail of defects (point defects, defect clusters …
atomic electrons. Along the trajectory, a trail of defects (point defects, defect clusters …
Enhancement in sensitivity of copper sulfide thin film ammonia gas sensor: effect of swift heavy ion irradiation
AA Sagade, R Sharma, I Sulaniya - Journal of Applied Physics, 2009 - pubs.aip.org
The studies are carried out on the effect of swift heavy ion (SHI) irradiation on surface
morphology and electrical properties of copper sulfide (Cu x S) thin films with three different …
morphology and electrical properties of copper sulfide (Cu x S) thin films with three different …
Swift heavy ion irradiation induced modification of electrical characteristics of Au/n-Si Schottky barrier diode
R Singh, SK Arora, D Kanjilal - Materials Science in Semiconductor …, 2001 - Elsevier
Modification in the electrical transport properties of Au/n-Si (111) Schottky barrier diode
(SBD) by swift heavy ion (SHI) irradiation has been investigated using in situ capacitance …
(SBD) by swift heavy ion (SHI) irradiation has been investigated using in situ capacitance …
Influence of SHI irradiation on the structure and surface topography of CdTe thin films on flexible substrate
S Chandramohan, R Sathyamoorthy… - Journal of Materials …, 2007 - Springer
Impact of ion irradiation on thin films is an emerging area for materials modification. CdTe
thin films grown by thermal evaporation on flexible molybdenum (Mo) substrate were …
thin films grown by thermal evaporation on flexible molybdenum (Mo) substrate were …
Influence of swift heavy ion irradiation on electrical characteristics of Au/n-Si (1 0 0) Schottky barrier structure
S Kumar, YS Katharria, Y Batra… - Journal of Physics D …, 2007 - iopscience.iop.org
The influence of swift heavy (180 MeV 107 Ag 14+) ion irradiation on Au/n-Si Schottky diode
characteristics has been analysed using in situ current–voltage (I–V) characterization. The …
characteristics has been analysed using in situ current–voltage (I–V) characterization. The …
Investigations on the in vitro bioactivity of swift heavy oxygen ion irradiated hydroxyapatite
RV Suganthi, S Prakash Parthiban, K Elayaraja… - Journal of Materials …, 2009 - Springer
The effect of swift heavy oxygen ion irradiation of hydroxyapatite on its in vitro bioactivity was
studied. The irradiation experiment was performed using oxygen ions at energy of 100 MeV …
studied. The irradiation experiment was performed using oxygen ions at energy of 100 MeV …
Effects of swift heavy ion irradiation on the electrical characteristics of Au/n-GaAs Schottky diodes
AT Sharma, S Kumar, YS Katharria, D Kanjilal - Applied surface science, 2007 - Elsevier
Metal-semiconductor diode of Au/n-GaAs is studied under the irradiation of swift heavy ion
(SHI) beam (80MeV 16O6+), using in situ current–voltage characterization technique. The …
(SHI) beam (80MeV 16O6+), using in situ current–voltage characterization technique. The …
Improvement in wear resistance of C+ ion implanted DC magnetron sputtered TiC film
DC Magnetron sputtered TiC films were subjected to C+ ion implantation in order to modify
the microstructure and topography. The surface roughness of implanted films increased due …
the microstructure and topography. The surface roughness of implanted films increased due …
Evidence of plastic flow and recrystallization phenomena in swift (∼ 100 MeV) Si7+ ion irradiated silicon
Surface modifications caused by a swift heavy ion irradiation on a crystalline p-type silicon
crystal have been reported.∼ 100 MeV Si7+ ions from a 15UD Pelletron source has been …
crystal have been reported.∼ 100 MeV Si7+ ions from a 15UD Pelletron source has been …