Spatial noise correlations beyond nearest neighbors in Si-Ge spin qubits

JS Rojas-Arias, A Noiri, P Stano, T Nakajima… - Physical Review …, 2023‏ - APS
We detect correlations in qubit-energy fluctuations of non-neighboring qubits defined in
isotopically purified Si/Si-Ge quantum dots. At low frequencies (where the noise is …

Low charge noise quantum dots with industrial CMOS manufacturing

A Elsayed, MMK Shehata, C Godfrin, S Kubicek… - npj Quantum …, 2024‏ - nature.com
Silicon spin qubits are promising candidates for scalable quantum computers, due to their
coherence and compatibility with CMOS technology. Advanced industrial processes ensure …

[HTML][HTML] Germanium wafers for strained quantum wells with low disorder

LEA Stehouwer, A Tosato, D Degli Esposti… - Applied Physics …, 2023‏ - pubs.aip.org
We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition
on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality …

CMOS compatibility of semiconductor spin qubits

ND Stuyck, A Saraiva, W Gilbert, JC Pardo, R Li… - arxiv preprint arxiv …, 2024‏ - arxiv.org
Several domains of society will be disrupted once millions of high-quality qubits can be
brought together to perform fault-tolerant quantum computing (FTQC). All quantum …

Impact of interface traps on charge noise and low-density transport properties in Ge/SiGe heterostructures

L Massai, B Hetényi, M Mergenthaler… - Communications …, 2024‏ - nature.com
Abstract Hole spins in Ge/SiGe heterostructures have emerged as an interesting qubit
platform with favourable properties such as fast electrical control and noise-resilient …

Decoherence induced by a sparse bath of two-level fluctuators: Peculiar features of noise in high-quality qubits

M Mehmandoost, VV Dobrovitski - Physical Review Research, 2024‏ - APS
Progress in fabrication of semiconductor and superconductor qubits has greatly diminished
the number of decohering defects, thus decreasing the devastating low-frequency 1/f noise …

Passive and active suppression of transduced noise in silicon spin qubits

J Park, H Jang, H Sohn, J Yun, Y Song, B Kang… - Nature …, 2025‏ - nature.com
Addressing and mitigating decoherence sources plays an essential role in the development
of a scalable quantum computing system, which requires low gate errors to be consistently …

Rapid single-shot parity spin readout in a silicon double quantum dot with fidelity exceeding 99%

K Takeda, A Noiri, T Nakajima, LC Camenzind… - npj Quantum …, 2024‏ - nature.com
Silicon-based spin qubits offer a potential pathway toward realizing a scalable quantum
computer owing to their compatibility with semiconductor manufacturing technologies …

[HTML][HTML] Surface passivation approaches for silicon, germanium, and III–V semiconductors

RJ Theeuwes, WMM Kessels, B Macco - Journal of Vacuum Science & …, 2024‏ - pubs.aip.org
Semiconductors are key to our modern society, enabling a myriad of fields, including
electronics, photovoltaics, and photonics. The performance of semiconductor devices can be …

Characterization of individual charge fluctuators in Si/SiGe quantum dots

F Ye, A Ellaboudy, D Albrecht, R Vudatha… - Physical Review B, 2024‏ - APS
Electron spins in silicon quantum dots are excellent qubits due to their long coherence
times, scalability, and compatibility with advanced semiconductor technology. Although high …